【Device Papers】β-Ga₂O₃ Trench-Gate MOSFET with VLD and Field Plate Design for Enhanced RF, Thermal, Breakdown Voltage, and Switching Application

      Researchers from the Jamia Millia Islamia have published a dissertation titled "β-Ga₂O₃ Trench-Gate MOSFET with VLD and Field Plate Design for Enhanced RF, Thermal, Breakdown Voltage, and Switching Application" in Physica Scripta.

Abstract

      This study proposes a high-performance β-Ga₂O₃ trench-gate (TG) MOSFET employing a variable lateral doping (VLD) scheme to strengthen power-device capability. The analysis examines the impact of VLD engineering, high-κ HfO₂ and Al₂O₃ dielectrics, and field-plate structures on the electrical, thermal, and radio-frequency (RF) characteristics. HfO₂ demonstrates lower ON-resistance and higher transconductance than Al₂O₃, along with reduced temperature sensitivity. The β-Ga₂O₃ TG-MOSFET achieves picosecond-scale switching, with a turn-on delay of 31.6 ps and rise time of 33.2 ps, supported by low parasitic capacitances (C_iss = 126.1 fF mm⁻¹, C_rss = 89.5 fF mm⁻¹). The turn-off transition (t_d(off) = 1.2 ns, t_f = 7.7 ns) confirms suitability for high-frequency power and RF operation. Incorporating dual field plates raises the off-state breakdown voltage from 2058 V to 3045 V an increase of 48% by lowering peak electric fields and redistributing the lateral field profile. The results confirm that the synergy between trench-gate design, lateral doping engineering, and dielectric optimization in β-Ga₂O₃ markedly enhances switching behavior, heat management, and breakdown strength, making the proposed architecture a compelling solution for advanced high-power, high-temperature, and RF applications.

DOI：

https://doi.org/10.1088/1402-4896/ae31b8