【Device Papers】Nitrogen Ion Implantation at Trench Bottoms for Improved Reverse Blocking Performance in β-Ga₂O₃ Schottky Barrier Diode

      Researchers from the Henan Normal University have published a dissertation titled "Nitrogen Ion Implantation at Trench Bottoms for Improved Reverse Blocking Performance in β-Ga₂O₃ Schottky Barrier Diode" in 2025 22nd China International Forum on Solid State Lighting & 2025 11th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS).

Abstract

      In this work, we demonstrate vertical β−Ga₂O₃ trench Schottky barrier diodes (SBDs) with enhanced reverse blocking capability enabled by N ion implantation at the trench bottom. Post-annealed implantation effectively suppresses electric field crowding, raising the breakdown voltage from 1099 V to 1676 V, while forward current shows a moderate decrease due to carrier scattering and compensation. The results highlight selective N implantation as an efficient strategy for engineering electric field distribution in trench structures, offering a promising route toward high-voltage and high-efficiency β−Ga₂O₃ power devices for power conversion, smart grids, and electric drives.

DOI：

https://doi.org/10.1109/SSLCHINAIFWS69008.2025.11314995