【Device Papers】Experimental Study on Dynamic Resistance Characteristics of Ga₂O₃ Schottky Barrier Diodes

      Researchers from the Zhejiang University have published a dissertation titled "Experimental Study on Dynamic Resistance Characteristics of Ga₂O₃ Schottky Barrier Diodes" in 2025 22nd China International Forum on Solid State Lighting & 2025 11th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS).

Abstract

      This study investigates the on-resistance characteristics of gallium oxide (Ga₂O₃) Schottky barrier diodes (SBDs) during their transition from the blocking state to various forwardcurrent conditions. A pulse test circuit incorporating an active clamping circuit was developed to enable high-fidelity dynamic resistance characterization. The core of this setup is a SiC Schottky barrier diode connected in parallel, which facilitates precise voltage sampling during the rapid switching of the device under test (DUT) from reverse blocking to forward conduction. This approach allows accurate measurement of the on-state voltage immediately after switching. Using this platform, the dynamic on-resistance of  Ga₂O₃ SBDs was systematically characterized under blocking voltages from 50 V to 400 V and load currents from 2 A to 5 A. Experimental results reveal the absence of significant dynamic on-resistance (R_on) degradation in the  Ga₂O₃ SBDs. The study provides key experimental data for in-depth understanding of Ga₂O₃ SBDs characteristics.

DOI：

https://doi.org/10.1109/SSLCHINAIFWS69008.2025.11314929