【Epitaxy Papers】The Growth of Doped β-Ga₂O₃ Thin Films on Quartz and Al₂O₃ Substrates by Using Sol Gel Method

      Researchers from the Mohamed Khider University have published a dissertation titled "The Growth of Doped β-Ga₂O₃ Thin Films on Quartz and Al₂O₃ Substrates by Using Sol Gel Method" in 6th International Conference on Electrical Engineering and Control Applications.

Abstract

      Gallium oxide shows great potential for advancing optoelectronic device technology. It is emerging as a key component in the field of wide-bandgap semiconductors, suitable for various applications. This study successfully grew undoped and doped β-Ga₂O₃ thin films using the sol-gel method. To enhance the quality of the doped beta-gallium oxide thin films, substrates of quartz and sapphire (Al₂O₃) were utilized, and their effects were analyzed. X-ray diffraction was used to characterize the structure of the samples. While the elemental compositions of the films were investigated by the Energy Dispersive X-ray spectroscopy. Optical transmittance values were measured with a UV-visible spectrophotometer, and thickness measurements were obtained using spectroscopic ellipsometry. Scanning electron microscopy (SEM) images revealed the morphology of the samples.

DOI：

https://doi.org/10.1007/978-981-95-1113-6_18