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【Member Papers】2.5 kV/674 MW/cm² or 100 A/2 kV β-Ga₂O₃ heterojunction diodes with large surge current and small recovery time
日期：2026-01-28阅读：35
Researchers from the Xidian University have published a dissertation titled "2.5 kV/674 MW/cm2 or 100 A/2 kV β-Ga2O3 heterojunction diodes with large surge current and small recovery time " in Science China-Information Sciences.
Project Support
This work was supported by National Natural Science Foundation of China (Grant Nos. 62222407, 62421005), Guangdong Basic and Applied Basic Research Foundation (Grant No. 2023B1515040024), and National Science Fund for Distinguished Young Scholars (Grant No. 62525402).
Abstract
The ultra-wide bandgap semiconductor β-Ga2O3 exhibits excellent material properties and availability of large-area（6-inch） substrates, showing great potential for next-generation power diodes requiring high current, high breakdown voltage（BV）, low onresistance（Ron）, and low loss. Thus, developing β-Ga2O3 diodes capable of handling hundreds of amperes and kilovolts is crucial.
Conclusion
The success of this work is largely attributed to the selection of p-Cr₂O₃ as a novel p-type layer material. The study demonstrates that by employing a p-Cr₂O₃/n-Ga₂O₃ heterojunction structure, the breakdown voltage can be significantly enhanced while maintaining an extremely low on-state resistance. A device with an area of 4 mm² achieved a breakdown voltage of 2530 V and a power figure of merit of 674 MW/cm². To the best of current knowledge, this represents the highest power density reported for gallium oxide diodes with an area exceeding 1 mm², underscoring the superiority of this material system for high-voltage, high-efficiency power conversion.
Historically, gallium oxide devices have been constrained by limited current-handling capability. This work overcomes that bottleneck through large-area chip design, enabling a single gallium oxide diode to deliver a current of 100 A. This achievement marks a critical milestone, indicating that gallium oxide devices now possess the capability to enter large-scale power electronic equipment applications.
Figure 1 (a) Cross-sectional diagram of the β-Ga2O3 HJD; (b) C-V characteristic of the β-Ga2O3 HJD; forward characteristics of (c) 4-mm2 and (d) 25-mm2 HJDs; comparison of breakdown characteristics with and without ET for (e) 4-mm2 and (f) 25-mm2 β-Ga2O3 HJDs in log scale; key relationships for representative state-of-the-art large area (>1 mm2 ) β-Ga2O3 diodes: (g) BV vs. minimal Ron,sp and (h) PFOM vs. Imax; (i)–(l) reverse recovery characteristics of the 4-mm2 and 25-mm2 diodes at varied forward currents, and their performance comparison versus a commercial SiC JBS diode; (m)–(p) surge current/voltage waveforms (insets: I-V loops) for the 4-mm2 and 25-mm2 β-Ga2O3 HJDs under a half-sine pulse, and their corresponding surge energy and power at various currents.
DOI：
https://doi.org/10.1007/s11432-025-4680-6
