【Member News】A Benchmark in Hard-Tech Commercialization: Fujia Gallium Supports Hangzhou Institute of Optics and Fine Mechanics in Securing Approval for One of the First Provincial-Level Proof-of-Concept Centers

      Recently, the Zhejiang Provincial Department of Science and Technology officially announced the list of 2025 Provincial-Level Proof-of-Concept (PoC) Centers. The “Zhejiang Advanced Optoelectronic Functional Materials Proof-of-Concept Center,” established by Hangzhou Institute of Optics and Fine Mechanics, was successfully approved, becoming one of the first provincial-level PoC centers in Zhejiang Province.

      As a benchmark incubation case of the center, Hangzhou Fujia Gallium Technology Co., Ltd. (“Fujia Gallium”) has once again drawn industry attention for its strong capabilities in the ultra-wide bandgap semiconductor field.

Crossing the “Valley of Death”: Provincial Recognition Marks a New Milestone

      Proof-of-concept validation represents the “first mile” of technology commercialization and is a critical step in bridging laboratory research and market-ready products. The establishment of provincial-level PoC centers by the Zhejiang Provincial Department of Science and Technology aims to implement the strategic deployment of the provincial government, accelerate the cultivation of new quality productive forces, and provide strong support for building an innovation-driven Zhejiang.

      The Zhejiang Advanced Optoelectronic Functional Materials Proof-of-Concept Center focuses on key areas including next-generation semiconductor materials, optoelectronic information, and high-end equipment. It provides a full-chain service system covering “concept validation → pilot-scale testing → entrepreneurial incubation → industrialization.” Its selection as a provincial-level center signifies official recognition of its systematic validation capabilities and technology commercialization strength in the optoelectronic hard-tech sector.

Benchmark Leadership: Fujia Gallium Advances Gallium Oxide Industrialization

      Among the projects incubated by the center, Fujia Gallium—one of China’s leading companies in Gallium Oxide industrialization—stands out as a representative example of hard-tech commercialization. Through continuous breakthroughs and industrial practice in Gallium Oxide (Ga₂O₃), the company has helped drive China’s Gallium Oxide industry toward scale and high-end development.

      As a representative ultra-wide bandgap semiconductor material, Gallium Oxide is widely regarded as a “rising star” in semiconductor materials. The preparation of large-diameter, high-quality single-crystal substrates remains a critical barrier to industrial advancement. Leveraging the engineering research platform and industrial incubation resources of Hangzhou Institute of Optics and Fine Mechanics’ provincial PoC center, Fujia Gallium has focused on R&D and commercialization of Gallium Oxide single-crystal substrates and epitaxial wafers.

      The company has successfully developed multiple 6-inch high-quality Gallium Oxide substrates with various crystal orientations, achieving domestic mass production of large-diameter core materials. Its breakthrough in 6-inch VB-grown Gallium Oxide single crystals filled a critical gap in China’s industrial supply chain, making Fujia Gallium a leading domestic supplier of 6-inch Gallium Oxide materials.

      Notably, Fujia Gallium achieved the world’s first successful growth of 8-inch Gallium Oxide crystals using the Vertical Bridgman (VB) method. This milestone not only set a new global record for VB-grown Gallium Oxide crystal size, but also provided high-quality domestic material solutions for downstream applications in power electronics and microwave RF technologies.

      Thanks to its leadership in Gallium Oxide industrialization, Fujia Gallium has been recognized as a National High-Tech Enterprise, a Zhejiang Province “Specialized and Sophisticated” SME, and a Hangzhou “Eagle Program” enterprise. Its qualifications and technological strength have been officially recognized at national, provincial, and municipal levels.

      The company places strong emphasis on intellectual property strategy. To date, it has secured 56 granted patents worldwide, including 14 international patents, forming a comprehensive and competitive IP protection system that strengthens its technological moat. It has also undertaken multiple major national and provincial projects led by the National Development and Reform Commission, the Ministry of Industry and Information Technology, and the Ministry of Science and Technology. As a core enterprise supporting national and regional Gallium Oxide industrial development strategies, Fujia Gallium plays a significant role in national standard formulation and industrial pathway exploration.

Looking Ahead: Building an Innovation Hub for Optoelectronics

      The approval of Hangzhou Institute of Optics and Fine Mechanics’ provincial-level Proof-of-Concept Center represents not only recognition of past achievements, but also expectations for future development.

      As a leading enterprise in gallium oxide industrialization within Hangzhou Institute of Optics and Fine Mechanics’ integrated “innovation + entrepreneurship + venture capital” ecosystem, Fujia Gallium will continue to uphold the principle of technological self-reliance. Leveraging the provincial PoC platform, the company will further deepen its commitment to ultra-wide bandgap semiconductors, continuously advance core technologies, refine its industrial layout, and enhance product supply capabilities.

      Looking forward, Fujia Gallium will fulfill its responsibility as an industry leader by accelerating the full-chain industrialization process—from materials development to device applications—driving coordinated growth across the upstream and downstream value chain. Through sustained innovation and industrial leadership, the company aims to contribute to the high-quality global development of fourth-generation gallium oxide semiconductors and support the establishment of a world-class innovation hub in optoelectronic hard technology.

Product Portfolio

Gallium Oxide Crystal Growth Equipment

      Fujia Gallium has developed the world’s first EFG crystal growth system featuring a proprietary “one-click crystal growth” function, supporting 2-inch to 6-inch crystal production. The system is protected by 6 granted domestic patents and 4 international patents. Complete equipment solutions and process packages are available.

      The company has also independently developed fully automated VB (Vertical Bridgman) crystal growth equipment. It was the first in China to overcome the technical bottleneck of 6-inch single-crystal growth using the VB method, enabling large-diameter bulk crystal production. This platform is supported by 6 granted domestic patents and 4 international patents, with customizable equipment and process solutions available.

Gallium Oxide Single-Crystal Substrates

      As one of China’s earliest pioneers in Gallium Oxide single-crystal research and an industry-leading supplier, Fujia Gallium provides high-quality single-crystal substrates to global customers.

      The product portfolio includes 26 standard substrate specifications ranging from 2-inch to 6-inch diameters. Customized solutions are available in terms of wafer size, electrical properties, and crystal orientation, supporting both advanced epitaxy R&D and volume production requirements.

Gallium Oxide Epitaxial Wafers

      Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, Fujia Gallium offers 15 standard epitaxial wafer products from 2-inch to 6-inch formats, as well as customized MBE-based epitaxial structures.

      The company provides integrated “substrate + epitaxy” solutions. A precise process control system enables customization of key parameters including epitaxial layer thickness, doping concentration, and compositional uniformity, meeting diverse requirements across different power levels and device architectures.

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., Ltd., established on December 31, 2019, is committed to the vision of “enabling the world with better materials” and focuses on the industrialization of ultra-wide bandgap Gallium Oxide semiconductor materials. Its core products include Gallium Oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, and crystal growth equipment based on the Vertical Bridgman (VB) and Edge-Defined Film-Fed Growth (EFG) methods. The company provides systematic solutions for material development, accelerating the integration of the entire ultra-wide bandgap Gallium Oxide industry chain and promoting the application of Gallium Oxide materials in power devices, microwave RF devices, and optoelectronic detection. A series of major achievements in Gallium Oxide development have been featured by leading media outlets including CCTV-1, CCTV-2, People’s Daily, Xinhua News Agency, China Securities Journal, and The Paper.

      In terms of corporate recognition, the company was designated as a Zhejiang Province Science and Technology SME in 2022, recognized as a National High-Tech Enterprise in 2023, and awarded the titles of Hangzhou High-Tech Enterprise R&D Center and Zhejiang “Specialized and Sophisticated” SME in 2024. In 2025, it obtained ISO 9001 Quality Management System certification (Certificate No. 20225Q20294R0M) and was also named a 2024 Hangzhou “New Eagle” Enterprise. In the Gallium Oxide field, the company is leading the drafting of the first national standard in this area and has undertaken one project from the National Development and Reform Commission and one from the Ministry of Industry and Information Technology, while participating in three additional national and provincial-level projects supported by the National Natural Science Foundation of China and regional authorities in Zhejiang and Shanghai. To date, the company has been granted 14 international patents (6 in the United States, 7 in Japan, and 1 in Europe), 42 domestic patents, three registered “Fujia Gallium” trademarks, and five software copyrights, including its proprietary “One-Click Crystal Growth” control software.