【Member News】Limited-Time Launch! Fujia Gallium Unveils Major Back-to-School Special Promotion
日期:2026-03-02阅读:97
China’s leading fourth-generation semiconductor Gallium Oxide material supplier, Hangzhou Fujia Gallium Technology Co., Ltd. (“Fujia Gallium”), has announced a global promotional campaign running from March 1 to March 31, 2026 under the theme:
“Same Budget, Double the Return.”
The initiative aims to lower the barriers for research institutions and downstream enterprises in the application and development of Gallium Oxide materials, while accelerating the overall advancement of China’s Gallium Oxide industry.
This campaign marks a strategic move by Fujia Gallium following the successful environmental compliance approval of its 10,000-wafer-scale production line earlier in 2026, officially ushering the company into a new phase of large-scale manufacturing. The promotion reflects the company’s commitment to giving back to the market and empowering industry growth.
Promotion Details
Promotion Period: March 1 – March 31, 2026
Offer 1: 50% off research-grade wafers (small-size wafers only)
Offer 2: Buy production-grade wafers and receive the same quantity and specifications of research-grade wafers free of charge
Contact: Mr. Ying | +86 13506753213
1.Research Wafers at a “Breakthrough Price” – 50% Off
During the promotion period, all small-size research-grade wafers will be offered at 50% of the standard price. This significant reduction in upfront material costs is designed to support research institutions and R&D teams by lowering entry barriers, encouraging broader experimental validation, and accelerating innovation pathways.
The initiative aims to inject new momentum into the exploration of Gallium Oxide materials across emerging application fields.
2.Production Wafers “Buy One, Get One” – Buy Production-Grade Wafers, Get Research-Grade Wafers Free
Customers who purchase production-grade substrate wafers during the campaign will receive the same quantity and specifications of research-grade wafers free of charge.
This effectively doubles customers’ error tolerance for process development. The complimentary research wafers can be used for:Process tuning, Parameter optimization, Equipment calibration, Personnel training.
By reducing trial-and-error costs in the manufacturing process, this program enables customers to transition from R&D to mass production with lower risk and higher efficiency.
Solemn Commitment
We fully recognize that the widespread adoption of new materials depends on close collaboration across the entire industry chain. “Same Budget, Double the Return” is not just a slogan — it is our commitment. Through this campaign, we hope to enable more partners to experience the superior performance of our high-quality Gallium Oxide materials without burden, and to jointly transform the technological advantages of the Gallium Oxide industry into tangible market advantages.
As the only company in China currently possessing both 6-inch single-crystal growth and epitaxy capabilities, Fujia Gallium has established a fully integrated industrial chain spanning crystal growth equipment, single-crystal substrates, and epitaxial wafers. The company’s self-developed VB and EFG crystal growth systems provide solid capacity assurance for this large-scale promotional initiative. In addition, for customers purchasing wafers in large volumes, Fujia Gallium will simultaneously introduce unprecedented exclusive benefits. For detailed information, please contact our sales representatives.
This special promotion marks an important step for Fujia Gallium not only in consolidating its technological leadership, but also in actively building an industry ecosystem and accelerating market maturity. Through substantial cost-reduction and efficiency-enhancement support, Fujia Gallium is working hand in hand with partners across the entire value chain to embrace the vast future of the fourth-generation semiconductor industry.
Product Portfolio
Gallium Oxide Crystal Growth Equipment
Fujia Gallium has developed the world’s first EFG crystal growth system featuring a proprietary “one-click crystal growth” function, supporting 2-inch to 6-inch crystal production. The system is protected by 6 granted domestic patents and 4 international patents. Complete equipment solutions and process packages are available.
The company has also independently developed fully automated VB (Vertical Bridgman) crystal growth equipment. It was the first in China to overcome the technical bottleneck of 6-inch single-crystal growth using the VB method, enabling large-diameter bulk crystal production. This platform is supported by 6 granted domestic patents and 4 international patents, with customizable equipment and process solutions available.
Gallium Oxide Single-Crystal Substrates
As one of China’s earliest pioneers in Gallium Oxide single-crystal research and an industry-leading supplier, Fujia Gallium provides high-quality single-crystal substrates to global customers.
The product portfolio includes 26 standard substrate specifications ranging from 2-inch to 6-inch diameters. Customized solutions are available in terms of wafer size, electrical properties, and crystal orientation, supporting both advanced epitaxy R&D and volume production requirements.
Gallium Oxide Epitaxial Wafers
Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, Fujia Gallium offers 15 standard epitaxial wafer products from 2-inch to 6-inch formats, as well as customized MBE-based epitaxial structures.
The company provides integrated “substrate + epitaxy” solutions. A precise process control system enables customization of key parameters including epitaxial layer thickness, doping concentration, and compositional uniformity, meeting diverse requirements across different power levels and device architectures.
About Hangzhou Fujia Gallium
Hangzhou Fujia Gallium Technology Co., Ltd., established on December 31, 2019, is committed to the vision of “enabling the world with better materials” and focuses on the industrialization of ultra-wide bandgap Gallium Oxide semiconductor materials. Its core products include Gallium Oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, and crystal growth equipment based on the Vertical Bridgman (VB) and Edge-Defined Film-Fed Growth (EFG) methods. The company provides systematic solutions for material development, accelerating the integration of the entire ultra-wide bandgap Gallium Oxide industry chain and promoting the application of Gallium Oxide materials in power devices, microwave RF devices, and optoelectronic detection. A series of major achievements in Gallium Oxide development have been featured by leading media outlets including CCTV-1, CCTV-2, People’s Daily, Xinhua News Agency, China Securities Journal, and The Paper.
In terms of corporate recognition, the company was designated as a Zhejiang Province Science and Technology SME in 2022, recognized as a National High-Tech Enterprise in 2023, and awarded the titles of Hangzhou High-Tech Enterprise R&D Center and Zhejiang “Specialized and Sophisticated” SME in 2024. In 2025, it obtained ISO 9001 Quality Management System certification (Certificate No. 20225Q20294R0M) and was also named a 2024 Hangzhou “New Eagle” Enterprise. In the Gallium Oxide field, the company is leading the drafting of the first national standard in this area and has undertaken one project from the National Development and Reform Commission and one from the Ministry of Industry and Information Technology, while participating in three additional national and provincial-level projects supported by the National Natural Science Foundation of China and regional authorities in Zhejiang and Shanghai. To date, the company has been granted 14 international patents (6 in the United States, 7 in Japan, and 1 in Europe), 42 domestic patents, three registered “Fujia Gallium” trademarks, and five software copyrights, including its proprietary “One-Click Crystal Growth” control software.

