【Member News】Industry–Research Synergy Drives New Breakthrough: Fujia Gallium and Shanghai Institute of Optics and Fine Mechanics Achieve New Advances in Gallium Oxide Crystal Growth

      Recently, China’s fourth-generation semiconductor materials industry has reached a critical milestone in industrialization. Hangzhou Fujia Gallium Technology Co., Ltd. (“Fujia Gallium”), in collaboration with the research team from the Shanghai Institute of Optics and Fine Mechanics under the Chinese Academy of Sciences, has achieved a major breakthrough in the low-cost, large-diameter, high-quality growth technology of Gallium Oxide single crystals. This advancement addresses a core challenge that has long constrained the large-scale industrial application of this material.

      The achievement not only marks China’s advancement to an internationally leading level in the field of Gallium Oxide—an emerging frontier semiconductor material—but also removes a critical materials bottleneck for its large-scale deployment in “new infrastructure” sectors such as new energy vehicles, data centers, and smart grids.

      The research results were published in CrystEngComm under the title “Realization of 4-Inch and Thick β-Ga₂O₃ Single Crystals Using the Vertical Bridgman Method” (2026, DOI: 10.1039/D5CE01023C).

      Gallium Oxide, as a representative ultra-wide-bandgap semiconductor material in the “post-Moore era,” offers significant advantages, including a wide bandgap, high breakdown electric field strength, and relatively low cost. It holds strong application prospects in sectors such as new energy vehicles, data centers, and smart grids. The controllable growth of high-quality, large-diameter Gallium Oxide single crystals has become a major focus of both academia and industry worldwide.

      The Vertical Bridgman (VB) method—also known as the crucible-lowering technique—represents a key technological pathway for the low-cost growth of Gallium Oxide crystals without relying on iridium crucibles, making it one of the most competitive approaches for single-crystal fabrication. However, significant challenges remain in scaling up crystal diameter, particularly in maintaining thermal field stability, controlling crystal defects, and ensuring compositional and structural uniformity.

      To address these critical issues, the team led by Chairman and Researcher Hongji Qi of Hangzhou Fujia Gallium Technology Co., Ltd. collaborated closely with the research group of Researcher Ning Jia from the Shanghai Institute of Optics and Fine Mechanics. By integrating the VB method with thermal field simulation technology, the team systematically optimized the crystal growth interface morphology and temperature gradient distribution, and was the first in the world to successfully grow an 8-inch Gallium Oxide single crystal.

      In the study recently published in CrystEngComm, the researchers conducted comprehensive characterization of (100)-oriented Gallium Oxide single crystals grown by the VB method, with a diameter of 4 inches and a thickness exceeding 30 mm. High-resolution X-ray diffraction (HRXRD) measurements showed a full width at half maximum (FWHM) ranging from 49.6 to 64.8 arcsec, indicating high crystalline quality and excellent structural uniformity.

      This achievement represents a model of deep integration between industry, academia, and research, providing solid technical support for the scalable production of high-quality, large-diameter Gallium Oxide single crystals.

Figure 1. (a) Photograph of a 4-inch Gallium Oxide wafer; (b) High-resolution XRD rocking curve of the Gallium Oxide wafer.

      As the industrialization platform of the Hangzhou Institute of Optical Precision Machinery, Hangzhou Fujia Gallium Technology Co., Ltd. is led by Researcher Hongji Qi, Director of Hangzhou Institute of Optical Precision Machinery, and works in close collaboration with crystal research teams from the Chinese Academy of Sciences. By integrating precise thermal field simulation with innovative crystal growth processes, the team has successfully overcome a series of core challenges in large-diameter crystal growth, including thermal field stability and defect control. Testing results confirm that the fabricated 4-inch Gallium Oxide wafers exhibit exceptionally high crystalline quality and outstanding structural uniformity, fully meeting the stringent requirements of next-generation high-performance power devices.

      At present, the joint team of Fujia Gallium and the Shanghai Institute of Optics and Fine Mechanics is further collaborating with Fudan University, Xidian University, and Shanghai Gongcheng Semiconductor Co., Ltd., among others. Together, they are advancing material–device co-optimization and validation based on end-application requirements, accelerating iterative performance upgrades of Gallium Oxide materials and the demonstration of power device applications, and continuously enhancing domestic technological self-reliance and controllability in advanced materials.

      In addition, as the commercialization arm of Hangzhou Institute of Optical Precision Machinery, Fujia Gallium has actively participated in initiating China’s first “Ultra-Wide Bandgap Semiconductor Industry Technology Innovation Strategic Alliance,” aiming to promote deep integration between the innovation chain and the industrial chain of Gallium Oxide technology. This effort provides strong support for building China’s core competitiveness in the emerging field of fourth-generation semiconductors.

Product Portfolio

Gallium Oxide Crystal Growth Equipment

      Fujia Gallium has developed the world’s first EFG crystal growth system featuring a proprietary “one-click crystal growth” function, supporting 2-inch to 6-inch crystal production. The system is protected by 6 granted domestic patents and 4 international patents. Complete equipment solutions and process packages are available.

      The company has also independently developed fully automated VB (Vertical Bridgman) crystal growth equipment. It was the first in China to overcome the technical bottleneck of 6-inch single-crystal growth using the VB method, enabling large-diameter bulk crystal production. This platform is supported by 6 granted domestic patents and 4 international patents, with customizable equipment and process solutions available.

Gallium Oxide Single-Crystal Substrates

      As one of China’s earliest pioneers in Gallium Oxide single-crystal research and an industry-leading supplier, Fujia Gallium provides high-quality single-crystal substrates to global customers.

      The product portfolio includes 26 standard substrate specifications ranging from 2-inch to 6-inch diameters. Customized solutions are available in terms of wafer size, electrical properties, and crystal orientation, supporting both advanced epitaxy R&D and volume production requirements.

Gallium Oxide Epitaxial Wafers

      Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, Fujia Gallium offers 15 standard epitaxial wafer products from 2-inch to 6-inch formats, as well as customized MBE-based epitaxial structures.

      The company provides integrated “substrate + epitaxy” solutions. A precise process control system enables customization of key parameters including epitaxial layer thickness, doping concentration, and compositional uniformity, meeting diverse requirements across different power levels and device architectures.

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., Ltd., established on December 31, 2019, is committed to the vision of “enabling the world with better materials” and focuses on the industrialization of ultra-wide bandgap Gallium Oxide semiconductor materials. Its core products include Gallium Oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, and crystal growth equipment based on the Vertical Bridgman (VB) and Edge-Defined Film-Fed Growth (EFG) methods. The company provides systematic solutions for material development, accelerating the integration of the entire ultra-wide bandgap Gallium Oxide industry chain and promoting the application of Gallium Oxide materials in power devices, microwave RF devices, and optoelectronic detection. A series of major achievements in Gallium Oxide development have been featured by leading media outlets including CCTV-1, CCTV-2, People’s Daily, Xinhua News Agency, China Securities Journal, and The Paper.

      In terms of corporate recognition, the company was designated as a Zhejiang Province Science and Technology SME in 2022, recognized as a National High-Tech Enterprise in 2023, and awarded the titles of Hangzhou High-Tech Enterprise R&D Center and Zhejiang “Specialized and Sophisticated” SME in 2024. In 2025, it obtained ISO 9001 Quality Management System certification (Certificate No. 20225Q20294R0M) and was also named a 2024 Hangzhou “New Eagle” Enterprise. In the Gallium Oxide field, the company is leading the drafting of the first national standard in this area and has undertaken one project from the National Development and Reform Commission and one from the Ministry of Industry and Information Technology, while participating in three additional national and provincial-level projects supported by the National Natural Science Foundation of China and regional authorities in Zhejiang and Shanghai. To date, the company has been granted 14 international patents (6 in the United States, 7 in Japan, and 1 in Europe), 42 domestic patents, three registered “Fujia Gallium” trademarks, and five software copyrights, including its proprietary “One-Click Crystal Growth” control software.