【Device Papers】Impact of fluorine plasma and electrothermal annealing on the interfacial properties at Ni/β-Ga₂O₃ Schottky contact

      Researchers from the University of Electronic Science and Technology of China (UESTC) and Wuhan University have published a dissertation titled "Impact of fluorine plasma and electrothermal annealing on the interfacial properties at Ni/β-Ga₂O₃ Schottky contact" in Journal of Semiconductors.

Abstract

      The interfacial properties of Schottky contacts crucially affect the performance of power devices. While a few studies have explored the impact of fluorine on Schottky contacts, a comprehensive theoretical explanation supported by experimental evidence remains lacking. This work investigates the effects of fluorine incorporation and electrothermal annealing (ETA) on the current transport process at Ni/β-Ga₂O₃ Schottky contacts. X-ray photoelectron spectroscopy and first-principles calculations confirm the presence of fluorine substitutions for oxygen and oxygen vacancies and their lowering effect on the Schottky barrier heights. Additionally, accurate electrothermal hybrid TCAD simulations validates the extremely short-duration high temperatures (683 K) induced by ETA, which facilitates lattice rearrangement and reduces interface trap states. The interface trap states are quantitatively resolved through frequency-dependent conductance technique, showing the trap density (D_T) reduction from (0.88−2.48) × 10¹¹ cm⁻²·eV⁻¹ to (0.46−2.09) × 10¹¹ cm⁻²·eV⁻¹. This investigation offers critical insights into the β-Ga₂O₃ contacts with the collaborative treatment and solids the promotion of high-performance β-Ga₂O₃ power devices.

DOI：

https://doi.org/10.1088/1674-4926/25050020