【Domestic News】Academic Committee Established at Shanghai Wide-Bandgap Semiconductor Key Laboratory, Academicians and Experts Discuss Breakthroughs in Fourth-Generation Gallium Oxide and Critical Materials

      On April 2, the Academic Committee of the Shanghai Key Laboratory of Wide-Bandgap and Ultra-Wide-Bandgap Semiconductor Materials (hereinafter referred to as the Laboratory) was officially established, and its inaugural meeting was held in Shanghai Lingang. Academicians and experts of the Academic Committee, including Academician Hao Yue from Xidian University, Academician Yang Deren from Zhejiang University, and Academician Zhu Shining from Nanjing University, attended the meeting, along with officials from the Shanghai Municipal Science and Technology Commission and the Lingang New Area, representatives from Shanghai Tianyue Semiconductor Materials Technology Co., Ltd. (hereinafter Tianyue), the Shanghai Institute of Optics and Fine Mechanics of the Chinese Academy of Sciences (hereinafter Shanghai Optics), and key research personnel.

      At the meeting, Qu Wei, Deputy Director of the Shanghai Municipal Science and Technology Commission; Zhu Xuming, Secretary of the Comprehensive Party Committee of Lingang New Area; Zong Yanmin, Chairman of Tianyue Advanced; and Chen Weibiao, Secretary of Shanghai Optics, delivered speeches to welcome the committee members and fellow experts, congratulated the Laboratory on its establishment, and briefly introduced the Laboratory’s strategic positioning and development goals.

      The Laboratory director presented a detailed report on the background of its establishment, development positioning, research directions, and key tasks. Attending experts delivered presentations on silicon carbide (SiC), gallium oxide (Gallium Oxide), diamond materials and devices, sharing the latest research progress and industrial applications in these fields. In addition, in-depth discussions were conducted on the Laboratory’s development positioning, refinement of research directions, key technological breakthroughs, and industry-academia-research collaboration. The experts provided a series of constructive suggestions and recommendations.

      Under the guidance of the Academic Committee, the Laboratory will continue to strengthen fundamental research and tackle key core technologies, promote the transformation of scientific and technological achievements, and attract high-level talent. The Laboratory aims to build an internationally leading research platform for wide-bandgap and ultra-wide-bandgap semiconductor materials, providing strong support for enhancing China’s innovation capacity in the semiconductor field.