【Conference News】Alliance Insights | At the 2026 Semiconductor New Materials Development (Deyang) Conference: Tracking the Development Trends of Gallium Oxide

      From April 15 to 18, the Alliance attended the 2026 Semiconductor New Materials Development (Deyang) Conference held in Deyang, Sichuan. As a key industry event focused on wide-bandgap and ultra-wide-bandgap semiconductors, the conference brought together stakeholders from academia, industry, and application sectors, engaging in comprehensive discussions on materials including silicon carbide, Gallium Nitride, Gallium Oxide, Aluminum Nitride, and Diamond.

      From an overall perspective, Gallium Oxide—as a next-generation ultra-wide-bandgap semiconductor—is transitioning from a phase of “technology route competition” to one of “industrial ecosystem development.” The focus of discussion is no longer limited to isolated technological breakthroughs, but is increasingly shifting toward coordinated development and closed-loop integration across materials, devices, and applications. This marks a clear signal of evolution in the current stage of the industry.

      Against this backdrop, the presence of Gallium Oxide has become significantly more prominent. Whether in expert presentations or in corporate exhibitions and exchanges, discussions around its single-crystal growth, device realization, and extreme-environment applications have become more concentrated. Based on on-site observations by the Alliance, Gallium Oxide is no longer merely viewed as a “promising material,” but is steadily entering a stage of systematic validation and industrialization expectation management. In particular, with the inclusion of Gallium Oxide and other ultra-wide-bandgap semiconductors in China’s upcoming “15th Five-Year Plan,” its strategic positioning within the industry is being further reinforced.

      The conference was chaired by Lin Jian, Secretary General of the Semiconductor Materials Branch of the China Electronic Materials Industry Association. During the conference, the Alliance placed particular focus on technical presentations and discussions related to Gallium Oxide.

      Key insights were drawn from presentations by leading experts, including Prof. Shining Zhu (Nanjing University), Prof. Deren Yang (Zhejiang University; Director of the State Key Laboratory of Silicon and Advanced Semiconductor Materials), Dr. Daohua Zhang (Chief Scientist for Fourth-Generation Semiconductors at Shenzhen Pinghu Laboratory), Dr. Dongmei Shi (former Chief Technical Officer of the High Technology Research and Development Center, National Natural Science Foundation of China), Chair Professor Xutang Tao (Shandong University), Prof. Hongji Qi (Director of Hangzhou Institute of Optics and Fine Mechanics and Chairman of Hangzhou Fujia Gallium Technology Co., Ltd.), and Prof. Hui Zhang (Zhejiang University; Chairman of Hangzhou GAREN Semiconductor Co., Ltd.).

      Their presentations—spanning material growth, defect control, device realization, and application pathways—collectively revealed a clear development trajectory. On one hand, material technologies are advancing toward higher quality, larger wafer sizes, and more stable processes. On the other hand, device development and application scenarios are beginning to align more closely, with increasing signs of coordinated progress across the industrial chain.

      At the same time, the Alliance visited member companies exhibiting at the venue and engaged with a number of potential partners.

      A direct observation is that industry attention toward Gallium Oxide has shifted from “whether to enter” to “how to enter” and “how to build differentiated capabilities.” Along with this shift, the demands have become more concrete. High-frequency topics in discussions now include access to research resources, industrial chain collaboration, talent matching, participation in standardization, and support for technology commercialization.

Participating Alliance Members: Hangzhou Fujia Gallium Technology Co., Ltd.; Tianjin Wondersino International Trade Co., Ltd.; Hangzhou GAREN Semiconductor Co., Ltd.; CETC 46th Research Institute

      This also gives the Alliance a clearer understanding of where its value lies: not merely in information dissemination or platform visibility, but in how to reorganize fragmented research capabilities, industrial needs, and resource elements into actionable collaboration mechanisms.

      From the overall experience of this conference, Gallium Oxide is at a critical stage—it has not yet fully entered large-scale industrial competition, but has already moved beyond the phase of pure technological exploration. At this juncture, those who can take the lead in integrating resources, engaging in standardization, and establishing viable application pathways are more likely to gain the initiative in the next phase of industry development.

      For the Alliance, this participation was not only an opportunity to engage with members and expand exchanges, but also a moment to reassess the current stage of the industry.

      Looking ahead, the Alliance will continue to focus on Gallium Oxide and ultra-wide-bandgap semiconductors, strengthening resource integration capabilities, deepening upstream and downstream collaboration, and promoting efficient alignment between research outcomes and industrial needs. As the industry moves toward a more systematized development phase, the Alliance aims to provide more targeted and effective support.