【Epitaxy Papers】Evolution of Ga₂O₃ Thin Film Properties with Nitrogen Doping Levels

      Researchers from the Beijing University of Technology and Shanghai Institute of Ceramics, Chinese Academy of Sciences have published a dissertation titled "Evolution of Ga₂O₃ Thin Film Properties with Nitrogen Doping Levels" in VACUUM.

Abstract

      Addressing the challenge of p-type doping in gallium oxide, this study prepared β-Ga ₂O ₃ films with varying nitrogen concentrations on Si and quartz substrates via radio-frequency magnetron sputtering. The effects of N-doping on the structure, optical, and electrical properties were systematically investigated. The results indicated that N-doping did not alter the fundamental crystal structure of β-Ga ₂O ₃but significantly modulated its optical bandgap, which decreased from 4.56 to 4.19 eV with increasing N content. Hall-effect measurements revealed that N-doping effectively tuned the carrier concentration and mobility, achieving a conversion from n-type to p-type conductivity at a specific doping level. Furthermore, photoelectric characterizations demonstrated a non-monotonic influence of N-doping on the UV photoresponse of β-Ga ₂O ₃ metal-semiconductor-metal devices. Optimal N-doping effectively enhanced the photo-to-dark current ratio and detection performance by suppressing dark current and optimizing carrier behavior.

LINK：

https://kns.cnki.net/kcms2/article/abstract?v=JRmhR0Lfi27YOVyDgFMGnk5Me58LQDzxCI5Iaab0hqw9G8j2JkhFRap802NJbOP6ISH5-A8c6ZDlamQkMY9C4ycXvue0YwldHR_fxle0Y0iq9wrsv5CLD_yVoCm-0ar8pkvJrpZP6HLq6TWkCo5dYPQ9FX4XbUvEre8DLLHz_-ufX462dDsRKg==&uniplatform=NZKPT&language=CHS