【Device Papers】Simulation Study on the Electrical Characteristics of New Composite Terminal Structure Lateral β-Ga₂O₃ Field-Effect Transistors

      Researchers from the North University of China have published a dissertation titled "Simulation Study on the Electrical Characteristics of New Composite Terminal Structure Lateral β-Ga₂O₃ Field-Effect Transistors" in Journal of Synthetic Crystals.

Abstract

      Gallium oxide (Ga₂O₃) power devices have emerged as a prominent research focus owing to their exceptional voltage-handing capability, low conduction and switching losses, and cost-effectiveness. However, the development of β-Ga₂O₃ based homojunction devices remains impeded by the persistent challenge of achieving reliable and controllable P-type doping. Meanwhile, the heterojunction termination devices still have problems such as high on-resistance and low breakdown voltage, which fail to meet the requirements of practical applications. To address the aforementioned issues, this paper innovatively proposes a composite terminal enhanced lateral NiO/ β-Ga₂O₃ heterojunction field-effect transistor (HJFET) consisting of a field-limiting ring made of NiO and a floating field plate. The influence of the length of the floating field plate, the length and thickness of the field-limiting ring on the breakdown characteristics of the device was studied in detail using the TCAD software. The results show that the combination of the field-limiting ring and the floating field plate can effectively alleviate the edge electric field concentration effect at the gate, and the high K dielectric HfO₂ can regulate the edge electric field of the heterojunction to be within the channel of β-Ga ₂O ₃. Eventually, the device achieved a high breakdown voltage of 2537 V. For the device with the floating field plate, a low on-resistance of 14.21 mΩ·cm², a breakdown voltage of 2358 V, and a PFOM of 391.285 MW·cm^-2 were obtained. This design provides a new idea for the design and optimization of high-power and high-voltage gallium oxide power devices.

DOI：

https://kns.cnki.net/kcms2/article/abstract?v=Omth-A4cfW91SlQRgzR2zyIzd_DPD1MkQRpbkhaxZwTY8k6B1JgiUwSfK3j2YQmx6k9nz-fpqt5ka-kKSQamc8L1q_BsJLQr0lhIxS5VjFQ4trqwuXqVWndTOjHQ3ib7PbtP2woqp35GZs10H1pofP9p1FYjEQZJzDXDvBt_t1SA2EgxjdCJRw==&uniplatform=NZKPT&language=CHS