【Device Papers】Ga₂O₃-Based Power Devices: From Material Constraints to System Integration

      Researchers from the Nantong University have published a dissertation titled "Ga₂O₃-Based Power Devices: From Material Constraints to System Integration" in Physica B: Condensed Matter.

Abstract

      β-Ga₂O₃ has attracted significant attention as an ultra-wide-bandgap semiconductor because of its large bandgap, high critical electric field, and theoretical potential for high-voltage power devices. Despite this promise, the practical performance of Ga₂O₃ devices is still constrained by several intrinsic material properties, particularly the low and anisotropic thermal conductivity, the absence of effective p-type doping, and the presence of electrically active defects at surfaces and interfaces. This review summarizes recent progress in bulk crystal growth and epitaxial techniques, with emphasis on defect formation mechanisms, background doping control, and orientation-dependent material properties. Representative Ga₂O₃ power device architectures, including Schottky barrier diodes, MOSFETs, and heterojunction-based devices, are then discussed from the perspective of electric-field management, interface-state effects, and breakdown-field utilization. Particular attention is given to termination design, interface engineering, and thermal management strategies, especially substrate engineering and heterogeneous integration, in relation to leakage suppression, reliability improvement, and heat dissipation. By connecting material properties with device behavior and system-level integration requirements, this review clarifies the major physical bottlenecks that must be overcome for β-Ga₂O₃ to realize its full potential in next-generation power electronic applications.

DOI：

https://doi.org/10.1016/j.physb.2026.418617