【Device Papers】Performance Self-powered Deep Ultraviolet Photodetector Based on Type-II CuBr/β-Ga₂O₃ p-n Heterostructure for UV Imaging

      Researchers from the Ludong University have published a dissertation titled " Performance Self-powered Deep Ultraviolet Photodetector Based on Type-II CuBr/β-Ga₂O₃ p-n Heterostructure for UV Imaging " in Journal of Alloys and Compounds.

Abstract

      Self-powered deep-ultraviolet photodetectors have significant potential for applications in monitoring and communication, astronomical observation, missile guidance, and optical imaging. Herein, a type-II heterojunction based on p-CuBr/n-β-Ga₂O₃ was fabricated by using pulsed laser deposition and vacuum thermal evaporation techniques for DUV photodetection and imaging applications. Under 255 nm DUV irradiation, the heterojunction device exhibits remarkable deep-UV response properties with peak responsivity of 38.99 mA/W and specific detectivity of 3.37 × 10¹² Jones at 0 V. Under periodic irradiation at 255 nm, the device exhibits high reproducibility and good operational stability, with fast response (86 ms) and recovery (51 ms) times. A new and effective approach to achieving high-performance self-powered DUV photodetectors has been demonstrated.

DOI：

https://doi.org/10.1016/j.jallcom.2026.187142