【Member News】Qi Hongji, Chairman of Fujia Gallium, Invited to Attend the 2026 Jiufengshan Forum and Deliver a Keynote Speech

      Qi Hongji, Founder and Chairman of Fujia Gallium, was invited to attend the 2026 Jiufengshan Forum and China Optics Valley International Compound Semiconductor Industry Expo, where he delivered a keynote speech titled “Reflections on the Industrialization of Galllium Oxide—Advancing Industry Deployment through Breakthroughs in 12-inch Galllium Oxide Single Crystal Technology.”

      On April 23, the highly anticipated 2026 Jiufengshan Forum and China Optics Valley International Compound Semiconductor Industry Expo officially opened at the China Optics Valley Convention & Exhibition Center. The event drew unprecedented attention, with nearly a thousand companies gathering on the first day and numerous new products launched. According to statistics, first-day attendance exceeded 15,000 visitors, setting a new record for single-day participation at the forum, while online livestream views surpassed 110,000. At this premier global semiconductor event, Qi Hongji, Founder and Chairman of Hangzhou Fujia Gallium Technology Co., Ltd., was invited to attend and deliver the keynote presentation.

      In his presentation, Qi Hongji systematically elaborated for the first time on the profound significance of breakthroughs in 12-inch large-diameter single-crystal technology for the industrialization of Galllium Oxide. As a core material of fourth-generation semiconductors, the preparation of large-size, high-quality Galllium Oxide crystals remains a critical bottleneck for large-scale application, directly tied to the core of industrialization—cost reduction and production line compatibility.

      Fujia Gallium has taken the lead in achieving a breakthrough in 12-inch single-crystal technology. This not only effectively reduces the marginal cost of materials, but also establishes compatibility with existing mature semiconductor wafer production lines. As a result, it provides essential material support for the large-scale deployment of Galllium Oxide in high-performance power devices and microwave RF devices.

      In his presentation, Qi Hongji drew on Fujia Gallium’s industrialization practices to provide an in-depth analysis of the opportunities and challenges facing the Galllium Oxide value chain. He noted that the transition from the “laboratory” to the “production line” requires close collaboration across the entire industry chain.

      Fujia Gallium has consistently followed a demand-driven approach, leveraging its independently developed VB (Vertical Bridgman) crystal growth technology to continuously push the global record for Galllium Oxide single-crystal size. Looking ahead, the company will further optimize the growth processes for 12-inch single crystals and substrate processing technologies, accelerating the mass production of high-quality, large-diameter Galllium Oxide substrates to meet the growing demand from downstream device manufacturers.

      The invitation to deliver a keynote speech at the Jiufengshan Forum highlights the industry’s strong recognition of Fujia Gallium’s technological strength and industrialization progress in the field of fourth-generation semiconductor materials.

      Looking ahead, the company will continue to uphold its vision of “bringing high-quality materials to the world,” deepen collaboration with research institutions and upstream and downstream partners, and jointly build a robust wide-bandgap semiconductor ecosystem, contributing to the high-quality development of China’s new-generation semiconductor industry.

Product Portfolio

Gallium Oxide Crystal Growth Equipment

      Fujia Gallium has developed the world’s first EFG crystal growth system featuring a proprietary “one-click crystal growth” function, supporting 2-inch to 6-inch crystal production. The system is protected by 6 granted domestic patents and 4 international patents. Complete equipment solutions and process packages are available.

      The company has also independently developed fully automated VB (Vertical Bridgman) crystal growth equipment. It was the first in China to overcome the technical bottleneck of 6-inch single-crystal growth using the VB method, enabling large-diameter bulk crystal production. This platform is supported by 6 granted domestic patents and 4 international patents, with customizable equipment and process solutions available.

Gallium Oxide Single-Crystal Substrates

      As one of China’s earliest pioneers in Gallium Oxide single-crystal research and an industry-leading supplier, Fujia Gallium provides high-quality single-crystal substrates to global customers.

      The product portfolio includes 26 standard substrate specifications ranging from 2-inch to 6-inch diameters. Customized solutions are available in terms of wafer size, electrical properties, and crystal orientation, supporting both advanced epitaxy R&D and volume production requirements.

Gallium Oxide Epitaxial Wafers

      Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, Fujia Gallium offers 15 standard epitaxial wafer products from 2-inch to 6-inch formats, as well as customized MBE-based epitaxial structures.

      The company provides integrated “substrate + epitaxy” solutions. A precise process control system enables customization of key parameters including epitaxial layer thickness, doping concentration, and compositional uniformity, meeting diverse requirements across different power levels and device architectures.

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., Ltd., established on December 31, 2019, is committed to the vision of “enabling the world with better materials” and focuses on the industrialization of ultra-wide bandgap Gallium Oxide semiconductor materials. Its core products include Gallium Oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, and crystal growth equipment based on the Vertical Bridgman (VB) and Edge-Defined Film-Fed Growth (EFG) methods. The company provides systematic solutions for material development, accelerating the integration of the entire ultra-wide bandgap Gallium Oxide industry chain and promoting the application of Gallium Oxide materials in power devices, microwave RF devices, and optoelectronic detection. A series of major achievements in Gallium Oxide development have been featured by leading media outlets including CCTV-1, CCTV-2, People’s Daily, Xinhua News Agency, China Securities Journal, and The Paper.

      In terms of corporate recognition, the company was designated as a Zhejiang Province Science and Technology SME in 2022, recognized as a National High-Tech Enterprise in 2023, and awarded the titles of Hangzhou High-Tech Enterprise R&D Center and Zhejiang “Specialized and Sophisticated” SME in 2024. In 2025, it obtained ISO 9001 Quality Management System certification (Certificate No. 20225Q20294R0M) and was also named a 2024 Hangzhou “New Eagle” Enterprise. In the Gallium Oxide field, the company is leading the drafting of the first national standard in this area and has undertaken one project from the National Development and Reform Commission and one from the Ministry of Industry and Information Technology, while participating in three additional national and provincial-level projects supported by the National Natural Science Foundation of China and regional authorities in Zhejiang and Shanghai. To date, the company has been granted 14 international patents (6 in the United States, 7 in Japan, and 1 in Europe), 42 domestic patents, three registered “Fujia Gallium” trademarks, and five software copyrights, including its proprietary “One-Click Crystal Growth” control software.