【Member News】Provincial TV Report: Withstanding 9000V Without Breakdown—Jiufengshan Laboratory Develops Ultra-High-Voltage “Electronic Switch,” Pushing Gallium Oxide Materials to New Limits

      A research team with an average age of around 30 at Jiufengshan Laboratory has recently developed an “electronic switch” capable of withstanding 9,000 volts, setting a new world record.

      High-voltage current “switches” are essential in applications such as power grids, high-speed rail, and AI data centers. In the past, mainstream materials for such switches were either too expensive or too bulky. Taking a different approach, the young team at Jiufengshan Laboratory adopted Gallium Oxide materials and introduced an innovative dual field-plate structure, successfully increasing the breakdown voltage to 9.02 kV.

      Li Mingzhe, a power device R&D engineer at Jiufengshan Laboratory, explained: “The dual-layer structure is like building a dam—it can hold back more ‘water,’ and release it when needed. Achieving a 9,000-volt tolerance is already considered highly advanced internationally. With epitaxial wafers provided by domestic companies, we have realized full-process autonomy from substrate and epitaxy to device and end-system design.”

      The breakthrough was achieved by a team with an average age under 30, including members who only recently graduated yet are already contributing to core Gallium Oxide device projects.

      Peng Ruoshi, also a power device R&D engineer, noted: “Young researchers are encouraged to take on roles as project managers and technical leads, coordinating overall project planning and progress. Everyone can align their interests and strengths to fully realize their potential and produce top-tier results.”

      Since its establishment, Jiufengshan Laboratory has adopted a market-oriented talent system, independently recruiting personnel and defining research topics, with a strong focus on both scientific outcomes and application prospects. In just three years, it has attracted over 500 high-level talents, with more than 95% holding master’s or doctoral degrees.

      The laboratory has also broken down departmental boundaries, organizing teams by project. Materials scientists and structural engineers work side by side, while fabrication and packaging specialists jointly optimize parameters. This “full-chain collaborative” model has enabled the breakdown voltage performance of Gallium Oxide devices to more than double within a single year.

      Li Mingzhe added: “Our team covers the entire industry chain—from materials, substrates, and epitaxy to device design, manufacturing, and packaging/testing. Sharing problems and experience across disciplines helps us solve issues faster and push forward cutting-edge technologies.”

      At present, Jiufengshan Laboratory has established capabilities in Gallium Oxide device R&D and wafer fabrication, and provides related products and services externally. More than 30 innovative companies have gathered around the laboratory, with a combined valuation exceeding RMB 10 billion, and nearly 600 global industry partners.

      Nian Laixia, Director of the Laboratory Division of the Hubei Provincial Department of Science and Technology, stated: “We encourage bold innovation in the market-oriented operation of the platform, focusing on the ‘51020’ advanced manufacturing clusters, and aligning research tasks with industrial demand, to build Hubei laboratories into a core hub for the deep integration of technological and industrial innovation.”