【Device Papers】The influence of intrinsic point defects on the optoelectronic properties of β-Ga₂O₃(100)/NiO(100) heterojunction interface

      Researchers from the Xi’an University of Science and Technology have published a dissertation titled "The influence of intrinsic point defects on the optoelectronic properties of β-Ga₂O₃(100)/NiO(100) heterojunction interface" in Journal of Atomic and Molecular Physics.

Abstract

      The effects of two kinds of point defects, oxygen vacancies(V_O) and nickel vacancies(V_Ni), on the optoelectronic properties of β-Ga₂O₃/NiO heterojunction interfaces are systematically investigated using first-principles calculations. Bader charge analysis shows that V_Oand V_Nilead to an increase in charge transfer at the heterojunction interfaces, but both of them introduce deep-energy-level defects in the band gap, which serve as the carrier capture centers, resulting in a significant inhibition of the carrier transport capacity. These deep energy level defects act as carrier capture centers, resulting in carrier localization, which significantly inhibits their transport capacity. Further analysis of the optical properties reveals that the point defects broaden the optical response of the heterojunction, extending its absorption edge into the visible region. The heterojunction itself can effectively broaden the UV absorption range of β-Ga₂O₃, while the point defects extend the photoresponse to the visible region, but this extension is at the expense of the selectivity in the day-blind UV band.

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https://kns.cnki.net/kcms2/article/abstract?v=A2Z-m-A1gcnFIUSBargUZYOM0NBAm1FWibUML5BkY8QUkyXdlyt6yrGAiO8k1YideD1g-NbjUOrSNuDuoYT1bpyszi4o9HVJXgo20a7KZNz9cLUsVRDyktwKM4K7Sr-p96DdO9GbzojPmvZqQ-ct_UbhS3IJJrszdQ-12rAOgNt-XK6Q1rs4GA==&uniplatform=NZKPT&language=CHS