【Member News】Milestone Breakthrough in (011) Ga₂O₃: Novel Crystal Technology Sets New Records in Both Epitaxy and 10 kV Devices

      Recently, significant progress has been achieved in device validation based on (011) epitaxial wafers developed by Novel Crystal Technology (hereinafter referred to as “NCT”). Researchers from the University of California and the Naval Research Laboratory jointly reported a breakthrough study demonstrating a vertical NiOx/(011) β-Ga₂O₃ heterojunction diode with a breakdown voltage exceeding 10 kV, a power figure of merit (PFOM) greater than 2.3 GW/cm², and a lateral breakdown electric field exceeding 5.3 MV/cm — establishing a new record for thick-film (011) Ga₂O₃ epitaxial layers.

      The device adopts an electron-beam/sputtered NiOx stacked structure combined with optimized edge termination design, effectively addressing the high leakage current and electric-field crowding issues commonly found in conventional Schottky diodes. The technology is considered highly suitable for medium-voltage power electronics applications such as AI data centers and fast charging systems for electric vehicles. Compared with SiC and GaN technologies, it also offers lower cost and better scalability, significantly expanding the performance ceiling of high-voltage, low-loss power devices.

      NCT has also recently launched a new series of high-quality (011) epitaxial wafer products with substantially improved technical specifications. The epitaxial thickness has been increased from the initial 20 μm to 30 μm, while the carrier concentration is precisely controlled within the range of 2–5 × 10¹⁵ cm⁻³. More importantly, through innovative process optimization, the defect density has been dramatically reduced from 80 pcs/cm² to only 5 pcs/cm², reaching an industry-leading level.

      According to NCT technical experts, preparing (011) substrates themselves is not particularly difficult; however, achieving high-quality growth of ultra-thick epitaxial layers remains extremely challenging. Leveraging extensive expertise and process know-how in HVPE epitaxy, the NCT team successfully overcame this technical bottleneck, although large-scale mass production remains difficult.

      To further drive industry innovation, NCT has already initiated the development of 2-inch, 50 μm-thick epitaxial products, aiming to provide customers with even more advanced solutions. Due to the complexity of the fabrication process and the ongoing challenge of yield improvement, these products are priced slightly higher than conventional epitaxial wafers. Therefore, they are primarily targeted at high-end customers with strong R&D capabilities who are pursuing next-generation device performance breakthroughs.

      Industry experts generally believe that the emergence of this breakthrough epitaxial product will provide strong momentum for improving the performance of Ga₂O₃ power devices and accelerate their adoption in high-end application fields.

      The development and success of NCT in the Chinese market are closely tied to its key agent in mainland China, Tianjin Wonder-Sino International Trade Co.,Ltd (Wonder-Sino). As NCT’s official partner in mainland China, Wonder-Sino upholds the philosophy of “leading cutting-edge technology and serving industry customers,” focusing on the ultra-wide bandgap Gallium Oxide materials sector. The company provides customers with internationally advanced Gallium Oxide materials and equipment to meet the high-end demands of scientific research, and offers tailored industrialization solutions for enterprises, supporting the broader industrial development of Gallium Oxide.

      Through the professional services and support of Wonder-Sino, NCT's Gallium Oxide products have been able to reach the customers in mainland Chinese mainland more efficiently, promoting in-depth cooperation between the two sides in technology research and development, market promotion, and customer service. At present, the cooperative clients of Wonder-Sino have covered major universities, research institutes and well-known companies. The customer coverage rate in the Gallium Oxide industry is close to 100%, laying a solid foundation for the development of NCT in the Chinese market.

      In the future, NCT will continue to increase its investment in research and development in the field of Gallium Oxide semiconductors and is committed to providing more high-performance and reliable Gallium Oxide devices. At the same time, NCT will work closely with partners such as Wonder-Sino to jointly explore the boundless possibilities of Gallium Oxide materials and contribute to the innovative development of the global semiconductor industry.

      For detailed articles, please click the link to adjust:【International Papers】VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga₂O₃ HJDs with PFOM >2.3 GW/cm²

      For more information about the products, please contact us through the following information!

      Contact: Mr. Shen 13820576818

      Contact email: st@wonder-sino.com

      Corporate website: www.wonder-sino.com