【Member News】Garen Semiconductor Leads Two Gallium Oxide National Standards Initiatives | National Semiconductor Materials Standards Project Review Meeting Successfully Held in Hangzhou

      From April 27 to 30, the National Semiconductor Materials Standards Project Demonstration Meeting and Standards Revision Working Conference was successfully held in Hangzhou. The conference was jointly organized by the National Semiconductor Materials Standardization Sub-Technical Committee, China Nonferrous Metals Industry Association affiliated institutions including the Nonferrous Metals Technology and Economic Research Institute Co., Ltd., and the China Nonferrous Metals Industry Standards, Metrology and Quality Institute. The event focused on the construction of semiconductor material standard systems and brought together leading industry experts to discuss pathways for high-quality industrial development.

      Hangzhou Garen Semiconductor Co., Ltd. (hereinafter referred to as “Garen Semiconductor”) led the application for two national standards projects — Gallium Oxide Single Crystal and Test Method for Dislocation Density in Gallium Oxide Single Crystals — and participated in the application of a total of six national standards projects, further solidifying its leading position in China’s gallium oxide standardization efforts.

World’s Only: Garen Semiconductor Leads in Technology Strength

      As a leading company in the fourth-generation semiconductor gallium oxide sector, Garen Semiconductor relies on its self-developed production lines and proprietary technologies. The company currently possesses the world’s first — and only — core technologies for 8-inch gallium oxide substrates and 8-inch homoepitaxial gallium oxide wafers, breaking long-standing technological monopolies and demonstrating the strong competitiveness of Chinese enterprises in the ultra-wide-bandgap gallium oxide semiconductor field.

      Driven by independently controllable production technologies and continuous innovation capabilities, Garen Semiconductor has achieved major breakthroughs in gallium oxide material preparation. According to authoritative testing institutions, the company’s 8-inch gallium oxide substrates and homoepitaxial wafers exhibit outstanding performance and have reached internationally leading levels.

      In addition, the company’s independently developed “SCIENCE” series VB crystal growth equipment for gallium oxide not only provides scalable solutions for industrial development, but also sets the technological direction for the global gallium oxide industry, making Garen Semiconductor a benchmark enterprise in worldwide gallium oxide innovation.

Standards First: Strengthening the Foundation of Industrial Development

      Deeply committed to gallium oxide standardization, Garen Semiconductor continues to lead industry standard upgrades. At this conference, the company led applications for two gallium oxide national standards projects and participated in six national standards initiatives covering key industrial links such as single-crystal preparation and defect characterization, further consolidating its core role in industry standard system construction.

      Previously, the company had already led the formulation of two industry group standards — β-phase Gallium Oxide Homoepitaxial Wafers (T/CEMIA 050-2025) and Test Method for Dislocation Density in Gallium Oxide Single Crystals (T/CEMIA 051-2025) — both of which have now been officially implemented, filling domestic gaps in related standards.

      The company’s latest national standards initiatives are expected to promote the transition of China’s gallium oxide standards from industry-level specifications to national-level standards, helping China secure a stronger voice in global gallium oxide standardization while laying a solid foundation for standardized and large-scale industrial development.

Aligning with National Strategy: Accelerating Gallium Oxide Industrialization

      Closely aligned with China’s “15th Five-Year Plan” strategy emphasizing the industrialization of gallium oxide, Garen Semiconductor is driving development through a dual-engine strategy of technological innovation and standards leadership. Leveraging its self-owned production lines, the company is fully advancing the large-scale and industrialized development of gallium oxide technologies to help China secure strategic advantages in the fourth-generation semiconductor industry.

      Looking ahead, Garen Semiconductor will continue to uphold its commitment to technological innovation, deepen R&D and production-line upgrades in core gallium oxide technologies, accelerate device verification and mass-production integration of 6-inch and 8-inch epitaxial wafers, and further promote industrial commercialization. With globally leading technological capabilities, the company aims to strengthen its industry leadership position while contributing to the independent and high-quality development of China’s fourth-generation semiconductor industry.

About GAREN SEMI

      Hangzhou Garen Semiconductor Co., Ltd. is a world-leading provider of Gallium Oxide materials and equipment solutions, focusing on R&D and industrialization in the ultra-wide bandgap semiconductor field. The company’s core products include 2–8-inch Gallium Oxide single crystals and substrates (with 8-inch being the world’s first), Gallium Oxide Vertical Bridgman (VB) crystal growth equipment, Gallium Oxide epitaxial wafers, etc. It is committed to building a full-chain product system of “equipment–crystal–substrate–epitaxy” to provide systematic solutions for global customers. The company’s achievements in Gallium Oxide have been specially reported by well-known media including People’s Daily, Xinhua News Agency, Science and Technology Daily, Sina Finance, China Blue News, and The Paper.

Enterprise Honors Summary

      Recognized as a National-level Science and Technology Small and Medium-sized Enterprise and Zhejiang Innovative Small and Medium-sized Enterprise in 2023;Awarded Zhejiang Specialized, Sophisticated, Unique and New Small and Medium-sized Enterprise in 2024;Approved as a High-tech Enterprise in 2025;Won the SEMI Outstanding Contribution Award for Sustainable Development at SEMICON CHINA 2025, the Together Progress Award at the Jufeng Summit Forum (JFSC) and Compound Semiconductor Industry Expo, the Innovation Vitality Award of Zhejiang Semiconductor Industry, the Second Prize in the Enterprise Group of the 10th “Maker China” Zhejiang Provincial Finals, the Top 500 Enterprise Group of the 10th “Maker China” SME Innovation and Entrepreneurship Competition, and the 2024–2025 Semiconductor Material Industry Contribution Award;The major breakthrough in the preparation of 8-inch Gallium Oxide single crystals and substrates was selected as one of the “Top 10 Advances in China’s Third-Generation Semiconductor Technology 2025” and “Major Scientific and Technological Achievements 2025” by the Department of Science and Technology of Zhejiang Province;Led the formulation of 2 group standard drafts, participated in drafting 1 national standard, and participated in promoting 1 group standard draft in the Gallium Oxide field;Supported by the “5213” Excellence Program of Xiaoshan District, Hangzhou, Zhejiang Province, and approved to establish Zhejiang Enterprise Research Institute;Obtained the quality management system certification;Granted 20 authorized invention patents at home and abroad (including patents in the US, Japan and other countries), with more than 50 patents pending.

For more information about Garen Semiconductor and its products, please visit our official website: http://garen.cc/

Or contact us via the following ways:

Mr. Jiang: 15918719807

E-mail: jiangjiwei@garen.cc

Mr. Xia: 19011278792

E-mail: xianing@garen.cc