【Device Papers】Self-powered ultraviolet bipolar switching photodetectors based on β-Ga₂O₃/GaN heterojunctions

      Researchers from the Guangxi University have published a dissertation titled "Self-powered ultraviolet bipolar switching photodetectors based on β-Ga₂O₃/GaN heterojunctions" in IEEE Photonics Journal.

Abstract

      Bipolar all-solid-state photodiodes, based on the photoelectric effect, are heralding a new dawn for the development of ultraviolet photonic integrated circuits. Here, we present a self-powered ultraviolet bipolar switching photodetector (SUBS-PD) based on a β-Ga₂O₃/GaN heterojunction. By introducing a heterojunction dual electric field to bidirectionally modulate carrier transport, the device achieves wavelength-selective photocurrent polarity reversal. It generates a positive photocurrent at 365 nm and a negative photocurrent at 270 nm, enabling intrinsic dual-band spectral discrimination without external power. By precisely engineering the thickness and doping concentration of the Ga₂O₃ layer, the optical absorption, internal electric-field distribution, and carrier transport dynamics are optimized, resulting in enhanced device performance. Furthermore, a simulated ultraviolet signal receiver incorporating the SUBS-PD demonstrates accurate American Standard Code for Information Interchange (ASCII) decoding. These results establish a compact and energy-efficient platform for programmable photonic circuits and secure ultraviolet optical communication.

DOI：

https://doi.org/10.1109/JPHOT.2026.3690325