【Device Papers】Dynamic electro-thermal circuit modeling for vertical NiO/β-Ga₂O₃ p–n diodes

      Researchers from Korea Aerospace University have published a dissertation titled " Dynamic electro-thermal circuit modeling for vertical NiO/β-Ga₂O₃ p–n diodes " in Microelectronics Reliability.

Abstract

      In this study, an electro-thermal circuit was modeled to analyze the self-heating effect of Ga₂O₃ diodes on their electrical behavior. The current–voltage characteristics and the temperature-dependent electric circuit parameters of vertical NiO/β-Ga₂O₃ p–n diodes were obtained. Three-dimensional thermal simulations were compared quantitatively with IR measurements. Through thermal simulations, a Cauer-type RC network model was extracted. The results of the electro-thermal circuit simulation showed that the circuit model could capture the thermal interaction under real operating conditions. This study shows that the circuit model can predict the operating properties through the real-time interaction between self-heating and electrical behavior. Finally, we established a circuit analysis framework that considers the thermal properties of Ga₂O₃ devices and present a method for designing circuits based on the materials used.

DOI：

https://doi.org/10.1016/j.microrel.2026.116157