【Member News】Fujia Gallium Invites You to FINE 2026: Future Industry New Material Expo—Chairman Hongji Qi to Deliver Keynote Speech

      The 2026 Future Industry New Material Expo (FINE 2026) is set to take place at the Shanghai New International Expo Centre from June 10 to 12, 2026.

      As a pioneer in the industrialization of fourth-generation semiconductor gallium oxide materials, Hangzhou Fujia Gallium Technology Co., Ltd. (hereinafter referred to as "Fujia Gallium") will showcase an array of gallium oxide materials and related products. We cordially invite you to visit us at Booth N1C29 in the Advanced Semiconductor Zone, Hall N1.

      During the event, Professor Hongji Qi, Founder and Chairman of Fujia Gallium, will deliver a keynote speech. He will share in-depth insights into the company's innovative practices and breakthrough advancements in the industrialization of gallium oxide.

      We look forward to welcoming you to our exhibition!

      FINE 2026 brings together multiple cutting-edge exhibition zones, including advanced semiconductors, AI chips & power device thermal management, advanced batteries & energy materials, and new material technological innovation. The event is expected to attract over 800 exhibitors and more than 60,000 professional visitors. Featuring over 25 themed forums and an exhibition area spanning 40,000 square meters, it stands as one of the largest and most professional comprehensive exhibitions in the field of new materials and advanced semiconductors in China.

      Professor Hongji Qi's keynote speech is titled "Reflections on the Industrialization of Gallium Oxide: 12-Inch Bulk Crystal Technological Breakthroughs Accelerating Industry Implementation." His presentation will center on the full-chain industrialization path of gallium oxide, from materials to devices. Key highlights will include AI-driven crystal growth, breakthroughs in large-size bulk crystal fabrication, high-performance epitaxial technologies, and the "substrate + epitaxy + device" vertical integration model. Through these topics, he will present Fujia Gallium's systematic insights and practical achievements in driving the industrialization of fourth-generation semiconductors.

      Fujia Gallium sincerely invites industry colleagues to visit Booth N1C29 in Hall N1 to jointly explore industrialization opportunities and collaboration possibilities for gallium oxide materials.

Product Portfolio

Gallium Oxide Crystal Growth Equipment

      Fujia Gallium has developed the world’s first EFG crystal growth system featuring a proprietary “one-click crystal growth” function, supporting 2-inch to 8-inch crystal production. The system is protected by 6 granted domestic patents and 4 international patents. Complete equipment solutions and process packages are available. The company has also independently developed fully automated VB (Vertical Bridgman) crystal growth equipment. It was the first in China to overcome the technical bottleneck of 12-inch single-crystal growth using the VB method, enabling large-diameter bulk crystal production. This platform is supported by 6 granted domestic patents and 4 international patents, with customizable equipment and process solutions available.

Gallium Oxide Single-Crystal Substrates

      As one of China’s earliest pioneers in Gallium Oxide single-crystal research and an industry-leading supplier, Fujia Gallium provides high-quality single-crystal substrates to global customers. The product portfolio includes 26 standard substrate specifications ranging from 2-inch to 8-inch diameters. Customized solutions are available in terms of wafer size, electrical properties, and crystal orientation, supporting both advanced epitaxy R&D and volume production requirements.

Gallium Oxide Epitaxial Wafers

      Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, Fujia Gallium offers 15 standard epitaxial wafer products from 2-inch to 6-inch formats, as well as customized MBE-based epitaxial structures. The company provides integrated “substrate + epitaxy” solutions. A precise process control system enables customization of key parameters including epitaxial layer thickness, doping concentration, and compositional uniformity, meeting diverse requirements across different power levels and device architectures.

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., Ltd., established on December 31, 2019, is committed to the vision of “enabling the world with better materials” and focuses on the industrialization of ultra-wide bandgap Gallium Oxide semiconductor materials. Its core products include Gallium Oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, and crystal growth equipment based on the Vertical Bridgman (VB) and Edge-Defined Film-Fed Growth (EFG) methods. The company provides systematic solutions for material development, accelerating the integration of the entire ultra-wide bandgap Gallium Oxide industry chain and promoting the application of Gallium Oxide materials in power devices, microwave RF devices, and optoelectronic detection. A series of major achievements in Gallium Oxide development have been featured by leading media outlets including CCTV, People’s Daily, Xinhua News Agency, China Securities Journal, and The Paper. In terms of corporate recognition, the company was designated as a Zhejiang Province Science and Technology SME in 2022, recognized as a National High-Tech Enterprise in 2023, and awarded the titles of Hangzhou High-Tech Enterprise R&D Center and Zhejiang “Specialized and Sophisticated” SME in 2024. In 2025, it obtained ISO 9001 Quality Management System certification (Certificate No. 20225Q20294R0M) and was also named a 2024 Hangzhou “Rising Eagle” Enterprise. In the Gallium Oxide field, the company is leading the drafting of the first national standard in this area and has undertaken one project from the National Development and Reform Commission and one from the Ministry of Industry and Information Technology, while participating in three additional national and provincial-level projects supported by the National Natural Science Foundation of China and regional authorities in Zhejiang and Shanghai. To date, the company has been granted 14 international patents (6 in the United States, 7 in Japan, and 1 in Europe), 42 domestic patents, three registered “Fujia Gallium” trademarks, and five software copyrights, including its proprietary “One-Click Crystal Growth” control software.