【Substrate Papers】Anisotropic implantation damage build-up and crystal recovery in β-Ga₂O₃

      Researchers from INESC Microsystems and Nanotechnology have published a dissertation titled "Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms " in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Abstract

      This work aims at investigating the implantation defect accumulation and crystal recovery dynamics in the inherently anisotropic β-Ga₂O₃ lattice. A systematic Rutherford Backscattering Spectrometry in Channelling mode (RBS/C) analysis of Cr-implanted samples was performed across multiple surface orientations and channelling directions. Distinct apparent defect accumulation and annealing rates were observed along different channelling axes, mainly attributed to the shadowing of certain defect types along some directions. The efficient defect removal observed after annealing was correlated with the strain relaxation observed via High-Resolution X-ray Diffraction (HRXRD) at temperatures as low as 500 °C, which is attributed to the removal of point defects. Annealing at higher temperature further improves crystalline quality, but at a slower rate. In short, this work enhances the understanding of the effect of structural anisotropic properties of β-Ga₂O₃ during ion implantation, as well as the crystal recovery during thermal annealing, highlighting the interplay between crystallography and defect dynamics.

DOI：

https://doi.org/10.1016/j.nimb.2026.166157