【Patenes】TySiC (SICC) Applies for Gallium Oxide Crystal Growth Patent: Multi-Crucible Growth in a Single Furnace Aims to Increase Throughput and Reduce Defects

      According to information released by the China National Intellectual Property Administration (CNIPA), Shandong SICC Co., Ltd. has filed a patent application entitled “Gallium Oxide Crystal Synchronous Growth Apparatus and Growth Method.” The publication number is CN122147528A, and the application number is CN202610402210.6. The application was filed on March 30, 2026, and published on June 5, 2026.

      According to the patent abstract, the invention discloses a gallium oxide crystal synchronous growth apparatus and growth method belonging to the field of crystal fabrication technology. The apparatus comprises a furnace body, a combined crucible, a crucible cover, and a lifting and rotation assembly.

      Inside the furnace, a first temperature zone, a transition temperature zone, and a second temperature zone are arranged sequentially from top to bottom. The combined crucible is positioned inside the furnace and consists of multiple crucible bodies stacked vertically. Each crucible body includes a side wall and a bottom wall and is designed in a funnel-like shape that is wider at the top and narrower at the bottom.

      The bottom transverse diameter of an upper crucible body is smaller than the transverse diameter of the top opening of the lower crucible body. In addition, the outer wall near the bottom of the upper crucible body fits against the inner wall near the top opening of the lower crucible body.

      By utilizing multiple crucible bodies to simultaneously grow gallium oxide crystals within a single furnace, the apparatus is designed to increase crystal growth throughput while reducing defects such as cracks and twins in gallium oxide crystals.

About Shandong SICC

      Founded on November 2, 2010, Shandong SICC Co., Ltd. was listed on the Shanghai Stock Exchange on January 12, 2022. The company is registered in Jinan, Shandong Province, with offices located in Jinan and Hong Kong, China.

      SICC is one of China's leading manufacturers of silicon carbide (SiC) substrates, possessing advanced crystal growth technologies and product quality that has reached internationally advanced standards.

      The company's core business focuses on the research, development, production, and sales of SiC substrates. According to the Shenwan industry classification system, it belongs to the Electronics → Semiconductors → Semiconductor Materials sector and is associated with concepts such as third-generation semiconductors, semiconductor materials, and silicon carbide.