【Member News】Fujia Gallium Achieves Batch Supply of 2-inch (011)-Oriented Gallium Oxide Substrates for the First Time Worldwide

      Hangzhou Fujia Gallium Technology Co., Ltd. (hereinafter referred to as “Fujia Gallium”) has achieved stable, mass-production capability for (011)-oriented gallium oxide (Ga₂O₃) single-crystal substrates, enabling continuous delivery to both domestic and international research institutions and industrial customers. This milestone marks a significant breakthrough in Fujia Gallium’s multi-orientation and multi-specification product strategy, further strengthening its product portfolio.

      Recently, high-resolution X-ray diffraction (HRXRD) measurements conducted by Shenzhen Pinghu Laboratory on Fujia Gallium’s 2-inch (011)-oriented Ga₂O₃ substrates showed an average full width at half maximum (FWHM) of approximately 16.2 arcsec across five measured points.

Figure 1. HRXRD results from Pinghu Laboratory

      A lower FWHM value indicates lower dislocation density and higher crystal quality. The measurement was performed in triple-axis mode, which provides higher angular resolution than double-axis measurements and more accurately reflects intrinsic crystal quality. These results demonstrate that Fujia Gallium’s mass-produced (011)-oriented Ga₂O₃ substrates have reached an internationally advanced level, providing high-reliability material support for power electronics and deep-ultraviolet photodetectors.

Figure 2. Specification sheet of Fujia Gallium 2-inch (011)-oriented Ga₂O₃ substrate

      Early in 2023, Professor Tao Xutang’s team at Shandong University conducted systematic research on (011)-oriented Ga₂O₃ substrates. Studies show that dislocations that typically induce line defects in the (001) plane are nearly parallel to the (011) plane, and therefore cannot propagate through it. This effectively suppresses line-defect formation, significantly reducing leakage current and breakdown risk in devices. In addition, epitaxial layers grown on (011)-oriented substrates exhibit lower defect densities. NCT (Japan) has also adopted (011)-oriented substrates and demonstrated vertical transistors with breakdown voltages exceeding 10 kV, further confirming their potential in high-voltage power electronic applications. The realization of mass supply of (011)-oriented substrates by Fujia Gallium ensures stable and consistent product delivery, strongly supporting research and device development.

Figure 3. Fujia Gallium (011)-oriented Ga₂O₃ substrate

      Founded in late 2019, Hangzhou Fujia Gallium is one of the earliest pioneers in gallium oxide single-crystal growth in China and a leading supplier of Ga₂O₃ materials and equipment. The company has completed multiple rounds of billion-yuan-level financing, was recognized as a 2026 Hangzhou “Gazelle (Unicorn-prep) Enterprise,” and operates the world’s first mass-production line capable of producing ten-thousand-level Ga₂O₃ substrates annually. It is also leading the drafting of the first national standard for gallium oxide materials.

      Looking forward, Fujia Gallium will continue expanding its product specifications, adhering to its mission of “enabling the world with better materials,” and providing higher-quality and more diversified Ga₂O₃ semiconductor products to global customers, jointly promoting the high-quality development of the fourth-generation semiconductor industry.

Product Portfolio

Gallium Oxide Crystal Growth Equipment

      Fujia Gallium has developed the world’s first EFG crystal growth system featuring a proprietary “one-click crystal growth” function, supporting 2-inch to 8-inch crystal production. The system is protected by 6 granted domestic patents and 4 international patents. Complete equipment solutions and process packages are available. The company has also independently developed fully automated VB (Vertical Bridgman) crystal growth equipment and was the first in China to overcome the technical bottleneck of 12-inch Ga₂O₃ single-crystal growth using the VB method, enabling the production of large-diameter bulk crystals.

Gallium Oxide Single-Crystal Substrates

      As one of China’s earliest pioneers in Gallium Oxide single-crystal research and an industry-leading supplier, Fujia Gallium provides high-quality single-crystal substrates to global customers. The product portfolio includes 26 standard Ga₂O₃ substrate specifications covering diameters from 2 to 8 inches. Customized solutions are available in terms of wafer size, electrical properties, and crystal orientation, supporting both advanced epitaxy R&D and volume production requirements.

Gallium Oxide Epitaxial Wafers

      Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, Fujia Gallium offers 15 standard epitaxial wafer products from 2-inch to 6-inch formats, as well as customized MBE-based epitaxial structures. The company provides integrated “substrate + epitaxy” solutions. A precise process control system enables customization of key parameters including epitaxial layer thickness, doping concentration, and compositional uniformity, meeting diverse requirements across different power levels and device architectures.

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., Ltd., established on December 31, 2019, is committed to its mission of “Bringing Better Materials to the World” and focuses on the industrialization of ultra-wide bandgap Gallium Oxide semiconductor materials. Its core products include Gallium Oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, and crystal growth equipment based on the Vertical Bridgman (VB) and Edge-Defined Film-Fed Growth (EFG) methods. The company provides systematic solutions for material development, accelerating the integration of the entire ultra-wide bandgap Gallium Oxide industry chain and promoting the application of Gallium Oxide materials in power devices, microwave RF devices, and optoelectronic detection. A series of major achievements in Gallium Oxide development have been featured by leading media outlets including CCTV, People’s Daily, Xinhua News Agency, China Securities Journal, and The Paper. In terms of corporate recognition, the company was designated as a Zhejiang Province Science and Technology SME in 2022, recognized as a National High-Tech Enterprise in 2023, and awarded the titles of Hangzhou High-Tech Enterprise R&D Center and Zhejiang “Specialized and Sophisticated” SME in 2024. In 2025, it obtained ISO 9001 Quality Management System certification (Certificate No. 20225Q20294R0M) and was also named a 2024 Hangzhou “Rising Eagle” Enterprise. In the Gallium Oxide field, the company is leading the drafting of the first national standard in this area and has undertaken one project from the National Development and Reform Commission and one from the Ministry of Industry and Information Technology, while participating in three additional national and provincial-level projects supported by the National Natural Science Foundation of China and regional authorities in Zhejiang and Shanghai. To date, the company has been granted 14 international patents (6 in the United States, 7 in Japan, and 1 in Europe), 42 domestic patents, three registered “Fujia Gallium” trademarks, and five software copyrights, including its proprietary “One-Click Crystal Growth” control software.