【Other Papers】Progress and challenge in ultrawide bandgap semiconductors

      Researchers from Shenzhen Pinghu Laboratory have published a dissertation titled " Progress and challenge in ultrawide bandgap semiconductors " in 2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Abstract

      Ultrawide bandgap semiconductors, including gallium oxide, aluminum nitride, and diamond, have been attracting great attention due to their unique properties suitable for high voltage and high temperature applications. In this paper, we discuss the challenges of the ultrawide bandgap semiconductors and present the recent progress made in materials and devices of the ultrawide bandgap semiconductors. These include improvement of p-type doping in gallium oxide, new technique for surface treatment and effect on device performance of Gallium oxide, high performance AlN/AlGaN HEMTs, and high breakdown voltage diamond SBD devices.

DOI：

https://doi.org/10.1109/EDTM65772.2026.11497059