【Domestic News】Another Listed Company Enters the Gallium Oxide Field! Oriental Semiconductor Allocates RMB 1.436 Billion in Fundraising to Include Fourth-Generation Semiconductors in Its Strategic Roadmap

日期：2026-07-09阅读：184

On July 3, Oriental Semiconductor (listed on the STAR Market in 2022, stock code: 688261) released a proposal for a convertible bond offering, planning to raise no more than RMB 1.436 billion. More than 93% of the proceeds will be invested in the development of new power devices, control chips, and R&D center construction. In this fundraising plan, gallium oxide (Ga₂O₃), a fourth-generation ultra-wide-bandgap semiconductor material, was included in the company's key R&D directions for the first time, becoming an important part of its strategic technology layout.

As a listed company specializing in power semiconductors in China, Oriental Semiconductor's decision to invest in gallium oxide power device R&D through public fundraising demonstrates the company's active focus on the development opportunities of next-generation ultra-wide-bandgap semiconductor technologies.

According to the announcement, Oriental Semiconductor will launch gallium oxide power device R&D under the project of "Technology and Product R&D and Industrialization of New Power Devices." The project has a construction period of 36 months and will focus on next-generation power electronics application scenarios, including ultra-high-voltage power transmission and distribution equipment, solid-state transformers, and industrial high-power supplies, building technological capabilities for future ultra-high-voltage power devices.

Oriental Semiconductor stated that while continuing to advance the R&D and industrialization of silicon-based devices and third-generation semiconductor products such as SiC and GaN, the company will also expand into fourth-generation semiconductor technologies, gradually establishing a technology portfolio covering silicon-based, wide-bandgap, and ultra-wide-bandgap semiconductors.

In recent years, gallium oxide has demonstrated significant development potential in ultra-high-voltage and high-power electronics applications due to its ultra-wide bandgap and high critical electric field advantages. With global industry players continuing to advance key technologies in materials, epitaxy, and devices, an increasing number of companies are incorporating gallium oxide into their medium- and long-term technology strategies.

By including gallium oxide in its fundraising project, Oriental Semiconductor has made fourth-generation semiconductor technology one of its important directions for publicly disclosed capital investment and long-term technology reserves. This also reflects that listed power semiconductor companies in China are beginning to incorporate next-generation ultra-wide-bandgap technologies into their strategic planning. From continuous evolution of silicon-based devices, to accelerated industrialization of third-generation wide-bandgap semiconductors, and further to forward-looking deployment of fourth-generation semiconductor technologies, China's power semiconductor industry is advancing toward multi-generation technology development, continuously building innovation momentum for the future evolution of power electronics.