Patents
【Patenes】Gallium Oxide Patents Weekly Update| Latest Advances in Crystal Growth, Device Fabrication, and Emerging Applications
日期：2026-07-10阅读：160
Introduction
To further strengthen information exchange within the gallium oxide industry and help stakeholders stay informed of the latest technological developments, the Asian Gallium Oxide Alliance (AGOA) has launched the Gallium Oxide Patent Weekly column. This series will continuously compile and publish newly disclosed patent applications and technological advances in the gallium oxide field.
As an important indicator of technological innovation, patents reflect R&D trends and strategic layout across the industrial chain. This column focuses on crystal growth, material preparation, defect engineering, device development, process optimization, and emerging applications, providing enterprises, universities, and research institutes with insights into technology trends while supporting the continued development of the gallium oxide industry.
This inaugural issue reviews gallium oxide-related patent applications published during the first week of July 2026 (June 29 – July 5).
Molecular Dynamics Simulation Method for Gradient Annealing of Oxygen Vacancies in Gallium Oxide (Published: June 30)
According to the China National Intellectual Property Administration (CNIPA), Wuhan University has filed a patent entitled "A Molecular Dynamics Simulation Method for Gradient Annealing of Oxygen Vacancies in Gallium Oxide" (Publication No. CN122310953A, Application No. 2026103667132).
Patent Summary
The invention relates to semiconductor material fabrication and provides a molecular dynamics simulation method for optimizing gradient annealing of oxygen vacancies in β-Ga₂O₃. Stable thermodynamic supercell models are first established through energy minimization and relaxation. Gradient annealing simulations are then performed at multiple temperatures to analyze the evolution of oxygen vacancy concentration with temperature and time, monitor vacancy healing in real time, and calculate oxygen vacancy diffusion coefficients.
The proposed stepwise annealing strategy with segmented temperature and heating-rate control improves oxygen vacancy recovery efficiency, shortens annealing time, and enhances crystal lattice quality.
Semiconductor Device Manufacturing Method and Semiconductor Device (Published: June 30)
According to CNIPA, Novel Crystal Technology Inc. has filed a patent entitled "Semiconductor Device Manufacturing Method and Semiconductor Device" (Publication No. CN122319740A, Application No. 2024800759466).
Patent Summary
The invention provides a manufacturing method in which a device structure is formed on the front side of a gallium oxide semiconductor substrate, followed by the formation of a base electrode on the backside. Laser annealing is then applied from above the base electrode to create a molten layer on the backside, subsequently forming the completed backside electrode.
This process improves the characteristics of the backside electrode region and contributes to optimized fabrication of gallium oxide semiconductor devices.
Vertical Bridgman Gallium Oxide Crystal Growth Apparatus and Growth Method (Published: July 3)
According to CNIPA, Tianjin University of Technology has filed a patent entitled "Vertical Bridgman Gallium Oxide Crystal Growth Apparatus and Growth Method" (Publication No. CN122327354A, Application No. 2026107092562).
Patent Summary
The disclosed apparatus includes a furnace body, heater, and lifting mechanism. Graphite-lined and alumina chamber assemblies divide the furnace into three independent regions: a crystal growth chamber, a protection chamber, and a heating chamber. A platinum-rhodium crucible is placed inside the growth chamber, while the heater is located in the heating chamber.
By independently controlling gas atmospheres and pressure differences between chambers, the design reduces high-temperature corrosion of the heating elements while preventing impurities from entering the crystal growth region, thereby improving crystal purity and quality.
Fabrication Method for Enhancement-Mode Gallium Oxide Transistors Based on Nitrogen Ion Channel Implantation (Published: July 3)
According to CNIPA, Southwest Jiaotong University has filed a patent entitled "Fabrication Method for Enhancement-Mode Gallium Oxide Transistors Based on Nitrogen Ion Channel Implantation Doping" (Publication No. CN122340842A, Application No. 2026104107725).
Patent Summary
The invention describes a fabrication process for enhancement-mode β-Ga₂O₃ transistors. After source and drain regions are formed on the β-Ga₂O₃ epitaxial layer and heavily doped to establish ohmic contacts, nitrogen ions are implanted into the gate terminal region to create acceptor-doped areas. Rapid thermal annealing is subsequently performed to activate the implanted dopants and repair lattice damage.
Nitrogen acceptor compensation enables enhancement-mode operation while mitigating etching-induced damage, interface-state generation, and channel electric-field concentration.
Gallium Oxide Patterning Method Based on Photocatalytic Self-Etching and Its Applications (Published: July 3)
According to CNIPA, the Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences has filed a patent entitled "Gallium Oxide Patterning Method Based on Photocatalytic Self-Etching and Its Applications" (Publication No. CN122341086A, Application No. 2024120003523).
Patent Summary
The invention introduces a one-step patterning process in which a gallium oxide substrate is exposed to process gases while patterned ultraviolet illumination induces photocatalytic decomposition of the gases, generating hydrogen and/or hydrogen radicals that selectively etch the illuminated regions.
The process eliminates the need for hard masks, photoresists, and conventional etching steps, thereby reducing fabrication costs and minimizing etching-induced damage.
Semiconductor Device, Manufacturing Method Thereof, and Power Conversion Apparatus (Published: July 3)
According to CNIPA, Mitsubishi Electric Corporation has filed a patent entitled "Semiconductor Device, Manufacturing Method Thereof, and Power Conversion Apparatus" (Publication No. CN122342278A, Application No. 2023801043181).
Patent Summary
The disclosed gallium oxide semiconductor device comprises a first-conductivity-type gallium oxide semiconductor layer, a main electrode on the first surface, and a second-conductivity-type electric-field relaxation layer surrounding the main electrode.
The electric-field relaxation layer includes a first region adjacent to the main electrode and a second region farther away, with the second region having a lower acceptor surface density than the first.
By optimizing the acceptor concentration distribution, the structure effectively regulates the electric field, improving the breakdown voltage and reliability of gallium oxide power devices.
Additional Gallium Oxide-Related Application Patents
In addition to patents related to gallium oxide semiconductor materials and devices, several newly published patents involve the use of gallium oxide as a functional material in other application fields.
Passivation Method and Structure for GaN-Based Light-Emitting Devices (Published: June 30)
According to CNIPA, Nanchang University, Nanchang Laboratory, and Nanchang Silicon-Based Semiconductor Technology Co., Ltd. have jointly filed a patent entitled "Passivation Method and Passivation Structure for GaN-Based Light-Emitting Devices" (Publication No. CN122318401A, Application No. 202610320630X).
Patent Summary
The invention introduces a passivation process in which ozone (O₃) is introduced into an atomic layer deposition chamber to selectively oxidize the sidewalls of GaN mesa structures, directly forming a Ga₂O₃ passivation layer.
This approach eliminates conventional lithography steps required for passivation layer patterning, simplifies device fabrication, improves manufacturing efficiency, and enhances GaN sidewall interface quality through the gallium oxide passivation layer.
Multi-Mechanism Synergistically Enhanced Gallium Oxide-Based Photocatalytic Foam Ceramic and Its Preparation Method and Applications (Published: July 3)
According to CNIPA, University of Shanghai for Science and Technology has filed a patent entitled "Multi-Mechanism Synergistically Enhanced Gallium Oxide-Based Photocatalytic Foam Ceramic and Its Preparation Method and Applications" (Publication No. CN122321846A, Application No. 202610471486X).
Patent Summary
The invention discloses a preparation method for gallium oxide-based photocatalytic foam ceramics. Gallium oxide powder, sintering additives, defect-control agents, photocatalytic active components, and reinforcing fibers are dispersed into a composite slurry. Through impregnation, drying, and gradient heat treatment, a photocatalytic functional phase and heterojunction structure are established.
The resulting Ga₂O₃-based foam ceramic exhibits high mechanical strength, excellent photocatalytic activity, and outstanding environmental stability, making it suitable for degrading persistent pollutants such as PFAS and antibiotics in wastewater treatment applications.
