Patents
【Patenes】Weekly Patent Update on Gallium Oxide (Issue 2, July): Innovations Continue Across Epitaxy, Devices, Doping, and Applications
日期：2026-07-17阅读：116
Introduction
To further strengthen information exchange within the gallium oxide industry and help stakeholders stay informed of the latest technological developments, the Asian Gallium Oxide Alliance (AGOA) has launched the Gallium Oxide Patent Weekly column. This series will continuously compile and publish newly disclosed patent applications and technological advances in the gallium oxide field.
As an important indicator of technological innovation, patents reflect R&D trends and strategic layout across the industrial chain. This column focuses on crystal growth, material preparation, defect engineering, device development, process optimization, and emerging applications, providing enterprises, universities, and research institutes with insights into technology trends while supporting the continued development of the gallium oxide industry.
This second issue reviews gallium oxide-related patent applications published during the second week of July 2026 (July 6 – July 12).
A Method for Improving the Quality of β-Ga₂O₃ Epitaxial Layers by Inserting an AlGaOₓ Buffer Layer (Published on July 7)
According to information from the China National Intellectual Property Administration (CNIPA), Guo Yuanyuan has filed a patent application entitled “A Method for Improving the Quality of β-Ga₂O₃ Epitaxial Layers by Inserting an AlGaOₓ Buffer Layer”. The published application number is CN122344707A, and the application number is 202510008697.5.
According to the patent abstract, the invention relates to the field of semiconductor thin-film epitaxy and discloses a method for improving the quality of β-Ga₂O₃ epitaxial layers through the insertion of an aluminum gallium oxide (AlGaOₓ) buffer layer. The method includes several processing steps. First, a sapphire substrate is cleaned by sequentially immersing it in acetone and absolute ethanol for 10 minutes each, followed by ultrasonic cleaning at 30 °C for 20 minutes. After cleaning, the substrate is rinsed with deionized water and dried using a nitrogen gun. Subsequently, an AlGaOₓ buffer layer is deposited on the sapphire substrate by magnetron sputtering, and a β-Ga₂O₃ epitaxial layer is then grown on the buffer layer using hydride vapor phase epitaxy (HVPE). Characterization results demonstrate that the introduction of the AlGaOₓ buffer layer effectively reduces the stress within the β-Ga₂O₃ epitaxial layer. As the tensile stress in the β-Ga₂O₃ layer decreases, the crystalline quality of the epitaxial film is significantly improved. This method provides a potential approach for enhancing the quality of β-Ga₂O₃ epitaxial materials grown on heterogeneous substrates.
A Flexible Amorphous Gallium Oxide Solar-Blind Ultraviolet Detector Based on an Asymmetric Electrode Structure, Its Preparation Method and Applications (Published on July 7)
According to information from the China National Intellectual Property Administration (CNIPA), Shanghai University has filed a patent application entitled “A Flexible Amorphous Gallium Oxide Solar-Blind Ultraviolet Detector Based on an Asymmetric Electrode Structure, Its Preparation Method and Applications”. The published application number is CN122349256A, and the application number is 202610233774.1.
According to the patent abstract, the invention relates to a flexible amorphous gallium oxide (a-Ga₂O₃) solar-blind ultraviolet (UV) detector based on an asymmetric electrode structure, as well as its preparation method and applications.
The solar-blind UV detector comprises a flexible substrate, an amorphous gallium oxide thin-film layer deposited on the upper surface of the flexible substrate, and an asymmetric interdigital electrode structure fabricated on the surface of the amorphous Ga₂O₃ film. The asymmetric interdigital electrodes form an Ohmic contact with the amorphous Ga₂O₃ thin film. The preparation method includes depositing an a-Ga₂O₃ thin film on a treated flexible substrate using magnetron sputtering under appropriate sputtering power conditions. Subsequently, asymmetric interdigital electrodes are fabricated on the a-Ga₂O₃ film through electron beam evaporation or magnetron sputtering techniques. Compared with existing technologies, this invention enables the fabrication of a flexible solar-blind UV detector through a low-cost and simple preparation process. The resulting device exhibits self-powered operation and maintains reliable UV detection performance under mechanical bending conditions, providing a potential approach for flexible optoelectronic applications.
A Ferroelectric Memory Device Based on Gallium Oxide Transistors and Hafnium Zirconium Oxide Trench Capacitors(Published on July 10)
According to the information from the China National Intellectual Property Administration (CNIPA), Nanjing University of Science and Technology has filed a patent application titled “A Ferroelectric Memory Device Based on Gallium Oxide Transistors and Hafnium Zirconium Oxide Trench Capacitors” (Publication No.: CN122373358A, Application No.: 2026103839904).
According to the patent abstract, the invention discloses a ferroelectric memory device based on gallium oxide transistors and hafnium zirconium oxide (HfZrO) trench capacitors. The device includes at least 1,024 independent memory cells, all integrated on a single gallium oxide substrate, with adjacent memory cells electrically isolated by Al₂O₃ insulating layers.
Each memory cell adopts a 1T1C (one transistor–one capacitor) structure, consisting of a gallium oxide transistor, a ferroelectric capacitor, and a Ru metal interconnection layer between the two. The gallium oxide transistor includes an n-type doped gallium oxide epitaxial layer formed on the gallium oxide substrate, as well as a discontinuous Al₂O₃ gate dielectric layer, gate electrode, drain electrode, and source electrode fabricated on the epitaxial layer. The ferroelectric capacitor is embedded in a circular trench within the gallium oxide substrate. From the surface near the trench inner wall inward, the capacitor structure consists sequentially of a bottom electrode, Hf₀.₅Zr₀.₅O₂ ferroelectric thin film, and top electrode. Compared with conventional technologies, this invention enables miniaturization, high-density integration, and improved reliability of ferroelectric memory devices, making it particularly suitable for non-volatile data storage applications under harsh environments such as high-temperature conditions.
A Ce-Doped Gallium Oxide Thin Film and Its Preparation Method and Application(Published on July 10)
According to information from the China National Intellectual Property Administration (CNIPA), Shandong University and Shandong University (Qihe) Institute of New Materials and Intelligent Equipment have filed a patent application titled “A Ce-Doped Gallium Oxide Thin Film and Its Preparation Method and Application”. The patent publication number is CN122358152A, and the application number is 2026105054975.
According to the patent abstract, the invention belongs to the technical fields of semiconductor devices and scintillation devices, and particularly relates to a Ce-doped gallium oxide thin film, its preparation method, and applications thereof. The preparation method comprises the following steps: first, a sapphire substrate is cleaned and pretreated. Gallium acetylacetonate and cerium acetylacetonate are then mixed and dissolved in water, with hydrochloric acid added to promote dissolution, forming a deposition solution. Using an inert gas as the carrier gas and hydrogen as the reducing gas, the deposition solution is supplied in a pulsed manner, ultrasonically atomized, and transported to the sapphire substrate surface, where a Ce-doped Ga₂O₃ thin film is deposited at 550–650°C. The pulsed supply process involves supplying the precursor for a preset duration, followed by stopping the supply for 10–50 seconds, while continuously maintaining the carrier gas flow during the interruption period. Compared with conventional solid-state doping methods, the invention employs a chemical vapor deposition (CVD) process to prepare Ce-doped Ga₂O₃ thin films, effectively addressing issues such as elemental segregation and difficulty in achieving uniform doping commonly encountered in traditional doping approaches.
A Method for Preparing Rare Earth Oxide/Gallium Oxide Polycrystalline Thin Films with Magnetoresistance Effect (Published on July 10)
According to information from the China National Intellectual Property Administration (CNIPA), Kunming University of Science and Technology has filed a patent application titled “A Method for Preparing Rare Earth Oxide/Gallium Oxide Polycrystalline Thin Films with Magnetoresistance Effect.” The patent publication number is CN122358124A, and the application number is 2026105374672.
According to the patent abstract, the invention discloses a method for preparing rare earth oxide/gallium oxide polycrystalline thin films with magnetoresistance effects. The method comprises the following steps: preparing evaporation materials, where the evaporation source is a core-shell structured rare earth oxide/gallium oxide composite particle. The core is a rare earth oxide precursor powder with the chemical composition La₁₋ₓCaₓTmO₃. After pretreatment of the substrate, the composite particles are placed into the evaporation boat of a thermal resistance evaporation system. The evaporation materials are then melted and evaporated, depositing onto the substrate surface to form a wet film. Finally, the film undergoes a flash sintering process under oxygen-rich conditions with an oxygen concentration of 50%–95%, resulting in the formation of a polycrystalline thin film. The invention adopts a single core-shell structured composite particle as the evaporation source, enabling the co-evaporation of rare earth oxides and gallium oxide. This approach effectively overcomes challenges associated with multi-component material deposition, including composition segregation and bursting or splashing of evaporation sources. The prepared thin films exhibit high crystallinity and significant magnetoresistance effects. Meanwhile, the proposed process features simple equipment, low manufacturing cost, and good potential for large-scale production.
A Method for Preparing Rare Earth Oxide/Gallium Oxide Magnetoresistive Composite Thin Films Based on Multi-Source Thermal Resistance Evaporation (Published on July 10)
According to information from the China National Intellectual Property Administration (CNIPA), Kunming University of Science and Technology has filed a patent application titled “A Method for Preparing Rare Earth Oxide/Gallium Oxide Magnetoresistive Composite Thin Films Based on Multi-Source Thermal Resistance Evaporation.” The patent publication number is CN122358125A, and the application number is 2026105375783.
According to the patent abstract, the invention discloses a method for preparing rare earth oxide/gallium oxide magnetoresistive composite thin films using a multi-source thermal resistance evaporation process. The method comprises the following steps: providing at least two evaporation materials, where each material is independently selected from either core-shell structured rare earth oxide/gallium oxide composite particles or separately packaged rare earth oxide precursor powders and homogeneous suspension mixtures of liquid gallium metal. After pretreatment of the substrate, the at least two evaporation materials are placed separately into multiple evaporation boats, and wet films are formed through either sequential evaporation or co-evaporation processes. Finally, the deposited films undergo flash sintering treatment under oxygen-rich conditions to obtain the composite thin films. Among these processes, sequential evaporation enables the fabrication of multilayer thin films with different compositions, while co-evaporation produces single-layer thin films with mixed compositions. The invention utilizes a multi-source thermal resistance evaporation strategy to flexibly regulate the composition, thickness, and interface structure of the films, enabling the preparation of either single-layer mixed-composition films or multilayer structures. This approach expands the design flexibility of magnetoresistive functional materials. In addition, the process features high stability, low equipment cost, and strong suitability for large-scale production.
A Gallium Oxide Epitaxial Structure Based on an n-Plane Sapphire Substrate and Its Applications (Published on July 10)
According to information from the China National Intellectual Property Administration (CNIPA), Nanjing University of Posts and Telecommunications and Nanjing University of Posts and Telecommunications Nantong Research Institute Co., Ltd. have filed a patent application titled “A Gallium Oxide Epitaxial Structure Based on an n-Plane Sapphire Substrate and Its Applications.” The patent publication number is CN122373693A, and the application number is 2026105461261.
According to the patent abstract, the invention belongs to the fields of semiconductor thin-film growth technology and optoelectronic devices, and discloses a gallium oxide epitaxial structure based on an n-plane sapphire substrate and its applications in the fabrication of optoelectronic semiconductor devices or device arrays.
The gallium oxide epitaxial structure comprises a substrate and a Ga₂O₃ layer grown on the substrate. The substrate is a sapphire layer, specifically an (11-23)-oriented single-crystal sapphire substrate (n-plane sapphire). Based on this gallium oxide epitaxial structure, the fabricated dual-mode devices can achieve reversible functional switching under different bias conditions. Under low bias, the devices exhibit highly sensitive and fast-response photodetection performance. Under high bias, they demonstrate significant persistent photoconductivity effects, enabling the simulation of brain-inspired synaptic characteristics. The invention features a simple structural design and controllable fabrication process. It enables a single device to simultaneously achieve high-performance ultraviolet photodetection and neuromorphic synaptic functions, significantly improving device integration and application flexibility. The technology shows potential for applications in ultraviolet imaging, optical communication, and intelligent sensing systems.
A MOCVD-Grown Gallium Oxide Epitaxial Wafer on SiC Substrate (Published on July 10)
According to information from the China National Intellectual Property Administration (CNIPA), Beijing Changlong Zhixin Semiconductor Co., Ltd. has filed a patent application titled “A MOCVD Gallium Oxide Epitaxial Wafer on SiC Substrate.” The patent publication number is CN122373427A, and the application number is 2026105690608.
According to the patent abstract, the invention discloses a MOCVD-grown gallium oxide epitaxial wafer on a SiC substrate, belonging to the field of wide-bandgap semiconductor epitaxial material preparation technology. The epitaxial wafer comprises, from bottom to top, a silicon carbide substrate, a β-Ga₂O₃ carbon-gettering layer, and a β-Ga₂O₃ drift layer. The carbon concentration ratio between the β-Ga₂O₃ carbon-gettering layer and the β-Ga₂O₃ drift layer is no less than 100, forming a carbon concentration gradient that gradually decreases from bottom to top. The β-Ga₂O₃ drift layer further contains periodically distributed annealing-repaired interfaces. The preparation method adopts a precursor spatiotemporal-separated alternating gas supply mode to grow the β-Ga₂O₃ drift layer, with in-situ rapid flash annealing steps periodically inserted during the growth process. Through a three-stage carbon purification mechanism, including carbon generation control at the source, defect-complex formation regulation, and accumulated carbon stabilization suppression, the invention enables synergistic carbon removal. This approach addresses the key technical challenge in MOCVD growth of ultra-thick β-Ga₂O₃ drift layers, namely the uncontrollable carrier compensation ratio caused by carbon contamination from metal-organic precursors.
A Gallium Oxide LPCVD Epitaxial Reactor Chamber and Method for Preparing Gallium Oxide Thin Films (Published on July 10)
According to information from the China National Intellectual Property Administration (CNIPA), China Electronics Technology Group Corporation (CETC) Third Generation Semiconductor Technology Innovation (Hunan) Co., Ltd. has filed a patent application titled “A Gallium Oxide LPCVD Epitaxial Reactor Chamber and Method for Preparing Gallium Oxide Thin Films.” The patent publication number is CN122358319A, and the application number is 2026106924330.
According to the patent abstract, the invention discloses a gallium oxide low-pressure chemical vapor deposition (LPCVD) epitaxial reactor chamber and a method for preparing gallium oxide thin films. The reactor chamber comprises a nested metal outer chamber and growth chamber. A gallium source furnace is arranged at the center of the bottom of the growth chamber, where metallic gallium is placed. Resistance heating wires are arranged around the gallium source furnace and between the metal outer chamber and the growth chamber, enabling the growth chamber and gallium source furnace to be heated to the preset reaction temperature. A showerhead gas distribution system and multiple transmission components are arranged at the top of the growth chamber. The transmission components are evenly distributed around the showerhead. The showerhead is connected to multiple gas inlet pipes for delivering process gases required for film growth. The transmission components are configured to hold the substrate and drive it to rotate inside the growth chamber. The invention features a simple principle, convenient operation, and high reliability. By introducing an inert gas curtain, it prevents premature mixing and reaction between gallium vapor and the oxygen source, reduces the loss of process gases along the transport path and unwanted pre-reactions, thereby effectively improving the utilization efficiency of raw materials, reducing production costs, and enhancing the quality of gallium oxide epitaxial growth.
In addition to patents focusing on gallium oxide materials, several patents published this week also involve the application of gallium oxide as a functional material in other fields, which are provided for readers’ reference.
A Method for Recovering Gallium Metal from Waste Light-Emitting Diodes (Published on July 10)
According to information from the China National Intellectual Property Administration (CNIPA), Tsinghua University has filed a patent application titled “A Method for Recovering Gallium Metal from Waste Light-Emitting Diodes”, with publication number CN122357898A and application number 2026102626281.
According to the patent abstract, the invention discloses a method for recovering gallium metal from waste light-emitting diodes (LEDs). The method utilizes flash Joule heating treatment to convert gallium nitride (GaN) and gallium arsenide (GaAs) in waste LEDs into gallium oxide (Ga₂O₃), which is further transformed into sodium gallate (NaGaO₂), thereby improving the leaching efficiency of gallium.
Compared with conventional processes that require several hours, the proposed method reduces the treatment time to only 110 seconds and decreases energy consumption by more than 50%. The gallium leaching efficiency can exceed 90%. With advantages including high efficiency, low energy consumption, and environmental sustainability, this technology enables the efficient recovery and reuse of gallium resources from waste LEDs, providing a new pathway for the large-scale and cost-effective development of gallium resources.
A Method for Regulating the Luminescence Performance of SrGa₂O₄:Dy³⁺ Phosphors via In³⁺ Doping (Published on July 10)
According to information from the China National Intellectual Property Administration (CNIPA), Anyang Normal University and Anyang Institute of Technology have filed a patent application titled “A Method for Regulating the Luminescence Performance of SrGa₂O₄:Dy³⁺ Phosphors via In³⁺ Doping”, with publication number CN122357136A and application number 2026104965336.
According to the patent abstract, the invention discloses a method for improving the luminescence properties of SrGa₂O₄:Dy³⁺ phosphors through In³⁺ doping. The method includes the following steps:
First, strontium carbonate, gallium oxide, dysprosium oxide, and indium oxide are weighed according to the molar ratio corresponding to the chemical formula Sr₁₋ₓGa₂₋ᵧO₄:xDy³⁺,yIn³⁺. The raw materials are then mixed and ground in an agate mortar with ethanol assistance to ensure uniform blending. The mixed powders are transferred into an alumina crucible, covered, and sintered in a muffle furnace at 1400 °C for 10 hours under an air atmosphere. After cooling to room temperature, the obtained sample is ground and sieved through a 200-mesh sieve to obtain In³⁺ and Dy³⁺ co-doped SrGa₂O₄ yellow phosphors.
The phosphors prepared by this method exhibit significantly enhanced luminescence intensity and extended fluorescence lifetime, providing an effective approach for tuning the optical performance of SrGa₂O₄-based phosphor materials.
An IGZO Barrier Layer Material, Preparation Method, and Thin-Film Transistor (Published on July 10)
According to information from the China National Intellectual Property Administration (CNIPA), Pioneer Thin Film Materials (Guangdong) Co., Ltd. has filed a patent application titled “An IGZO Barrier Layer Material, Preparation Method, and Thin-Film Transistor”, with publication number CN122373862A and application number 2026104977210.
According to the patent abstract, the invention relates to a barrier layer material for indium gallium zinc oxide (IGZO) thin-film transistors and its preparation method. The proposed IGZO barrier layer optimizes the composition ratio of indium oxide, gallium oxide, and zinc oxide in IGZO. Specifically, an IGZO thin film with an In:Ga:Zn atomic ratio of 1:(2–4):(5–7) is applied as a barrier layer for the IGZO channel layer.
By using the same oxide material system as the IGZO channel layer and taking advantage of the high Ga and Zn content in the IGZO barrier layer, the proposed material can effectively reduce interface defects between the barrier layer and channel layer, improve carrier concentration and sheet resistance of the thin film, and enhance the overall performance of thin-film transistors.
This technology addresses the issue of insufficient performance of conventional barrier layer materials in thin-film transistors, helping prevent device failures such as short circuits or abnormal driving operation, and provides a high-performance IGZO barrier layer material for advanced display and semiconductor applications.
