【Member News】Chen Duanyang of Fujia Gallium: Intelligent Crystal Growth — A Practical Paradigm for AI-Enabled Materials Industrialization

日期：2026-07-21阅读：228

The 7th Symposium on Third-Generation Semiconductor Materials and Equipment, hosted by the China Advanced Semiconductor Industry Innovation Alliance (CASA) and the State Key Laboratory of Wide Bandgap Semiconductor Materials and Devices is referred to in the source, but sticking strictly to the text provided: State Key Laboratory of Wide Bandgap Semiconductor Lighting Materials and Technology), and co-organized by the China Electronics Process Equipment Association (CEPEA), was successfully held in Yizhuang, Beijing, on July 17, 2026. Dr. Chen Duanyang, Deputy General Manager of Hangzhou Fujia Gallium Technology Co., Ltd., was invited to attend the conference and delivered a keynote speech titled "Gallium Oxide Crystal Growth and Industrialization Equipment". Dr. Chen first provided a comprehensive overview of Fujia Gallium’s efforts and milestone achievements in the industrialization of gallium oxide substrates, epitaxy, and devices. He then highlighted the critical role of intelligent crystal growth equipment, featuring “self-learning and self-evolution” capabilities, in advancing the industrialization of gallium oxide under the company’s dual-driven development strategy of equipment and process innovation.

Equipment–Process Dual-Drive Strategy

Dr. Chen Duanyang stated that since its establishment, Fujia Gallium has adhered to a “dual-drive strategy” integrating equipment development and process innovation, accelerating breakthroughs in gallium oxide technology and addressing key bottlenecks in Ga₂O₃ industrialization at the source. In 2023, the company expanded its crystal growth technologies to include both edge-defined film-fed growth (EFG) and vertical Bridgman (VB) methods, while deeply integrating artificial intelligence (AI) technologies into the crystal growth process. Within just a few years, Fujia Gallium not only achieved a breakthrough in crystal growth size from 6-inch to 12-inch, but also successfully developed fully independently intellectual property-owned crystal growth equipment, including its “one-click crystal growth” EFG system and intelligent VB growth equipment.

Building Patent Barriers and Leading Industry Standards

Focusing on single-crystal growth technologies, intelligent crystal growth equipment, and epitaxial processes, Fujia Gallium has proactively established an international patent portfolio. The company has obtained 17 granted international patents in the United States, Japan, and the European Union (including 6 in the US, 7 in Japan, and 4 in the EU), along with 48 granted domestic patents. It is the only Chinese company among the top 15 global entities in terms of patent holdings in the gallium oxide field, marking China’s transition from a technology follower to a parallel innovator in this emerging sector.

Meanwhile, Fujia Gallium has strategically deployed intellectual property for intelligent single-crystal growth and epitaxial fabrication technologies on a global scale, laying the foundation for future leadership in the industry. In addition, following its leadership in drafting the first national standard for gallium oxide, “Gallium Oxide Single Crystal Polished Wafers,” in 2025, the company again took the lead in drafting the national standard “Measurement of Carrier Concentration in Gallium Oxide Epitaxial Layers—Capacitance–Voltage Method” in 2026, further contributing to the establishment of a standardized gallium oxide industry ecosystem.

EFG “One-Click Crystal Growth” Equipment (FJ-EFG)

Supports crystal growth processes from 2-inch to 6-inch wafers;

Optional thermal field simulation and modeling data are available.

Maximum temperature: 2100 °C
Heating method: Medium-frequency induction heating, 40 kW
Maximum pulling height: 500 mm
Pulling rate: 1.8 mm/h – 120 mm/min
Weighing capacity: 20 kg / resolution: 10 mg
Control system: PLC-based control
Working atmosphere: Configurable for Ar / O₂ / CO₂ and other atmospheres

Intelligent VB Crystal Growth Equipment (FJ-VB Series)

Equipped with an intelligent control system designed for remote operation, ensuring stable and reliable crystal growth quality;

Provides process technology support for 2–6 inch crystal growth;

Optional thermal field simulation and modeling data available.

Maximum temperature: 1820°C
Heating method: Resistance heating (other heating methods available as options)
Lifting rate: 0.05 mm/h ~ 10000 mm/h
Rotation speed: 0.1 r/min ~ 30 r/min
Control system: PLC-based control
Working atmosphere: Air / Ar / O₂ / CO₂ and other gases available
Temperature accuracy: ±1°C (optional upgrade to ±0.1°C)

Product Portfolio

Gallium Oxide Crystal Growth Equipment

Fujia Gallium has developed the world’s first EFG crystal growth system featuring a proprietary “one-click crystal growth” function, supporting 2-inch to 8-inch crystal production. The system is protected by 6 granted domestic patents and 4 international patents. Complete equipment solutions and process packages are available. The company has also independently developed fully automated VB (Vertical Bridgman) crystal growth equipment and was the first in China to overcome the technical bottleneck of 12-inch Ga₂O₃ single-crystal growth using the VB method, enabling the production of large-diameter bulk crystals. Currently, this equipment has been granted 6 domestic patents and 4 international patents, and VB systems along with process packages can be provided based on customer requirements.

Gallium Oxide Single-Crystal Substrates

As one of China’s earliest pioneers in Gallium Oxide single-crystal research and an industry-leading supplier, Fujia Gallium provides high-quality single-crystal substrates to global customers. The product portfolio includes 26 standard Ga₂O₃ substrate specifications covering diameters from 2 to 8 inches. Customized solutions are available in terms of wafer size, electrical properties, and crystal orientation, supporting both advanced epitaxy R&D and volume production requirements.

Gallium Oxide Epitaxial Wafers

Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, Fujia Gallium offers 15 standard epitaxial wafer products from 2-inch to 6-inch formats, as well as customized MBE-based epitaxial structures. The company provides integrated “substrate + epitaxy” solutions. A precise process control system enables customization of key parameters including epitaxial layer thickness, doping concentration, and compositional uniformity, meeting diverse requirements across different power levels and device architectures.

About Hangzhou Fujia Gallium

Hangzhou Fujia Gallium Technology Co., Ltd., established on December 31, 2019, is committed to its vision of “Bringing Better Materials to the World” and focuses on the industrialization of ultra-wide bandgap gallium oxide semiconductor materials. Its core products include gallium oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, and crystal growth equipment based on the Vertical Bridgman (VB) and Edge-Defined Film-Fed Growth (EFG) methods. The company provides systematic solutions for material development, accelerating the integration of the entire ultra-wide bandgap gallium oxide industry chain and promoting the application of gallium oxide materials in power devices, microwave RF devices, and optoelectronic detection. A series of major achievements in gallium oxide development have been featured by leading media outlets including CCTV, People’s Daily, Xinhua News Agency, China Securities Journal, and The Paper.In terms of corporate recognition, the company was designated as a Zhejiang Province Science and Technology SME in 2022, recognized as a National High-Tech Enterprise in 2023, and awarded the titles of Hangzhou High-Tech Enterprise R&D Center and Zhejiang “Specialized and Sophisticated” SME in 2024. In 2025, it obtained ISO 9001 Quality Management System certification (Certificate No. 20225Q20294R0M) and was also named a 2024 Hangzhou “Rising Eagle” Enterprise. In the gallium oxide field, following its leadership in drafting the first national standard, “Gallium Oxide Single-Crystal Polished Wafers,” in 2025, the company further took the lead in drafting the national standard for epitaxial performance testing, “Test Method for Carrier Concentration of Gallium Oxide Epitaxial Layers—Capacitance-Voltage Method,” in 2026. It has undertaken one project from the National Development and Reform Commission and one from the Ministry of Industry and Information Technology, while participating in three additional national and provincial-level projects supported by the National Natural Science Foundation of China and regional authorities in Zhejiang and Shanghai. To date, the company has been granted 17 international patents (6 in the United States, 7 in Japan, and 4 in Europe), 48 domestic patents, three registered “Fujia Gallium” trademarks, and five software copyrights, including its proprietary “One-Click Crystal Growth” control software.