【Device Papers】Improve the performance of Ga₂O₃ ultraviolet photodetector via Ga₂O₃/(InGa)₂O₃ heterogeneous structure

      Researchers from University of Electronic Science and Technology of China have published a dissertation titled " Improve the performance of Ga₂O₃ ultraviolet photodetector via Ga₂O₃/(InGa)₂O₃ heterogeneous structure " in Vacuum.

Abstract

      Ga₂O₃ is a critical material for deep ultraviolet (UV) photodetectors due to its ultra-wide intrinsic bandgap. In this work, (InGa)₂O₃ thin films with varying In concentrations were grown on sapphire substrates via molecular beam epitaxy (MBE). Subsequently, metal-semiconductor-metal (MSM) UV photodetectors based on pure Ga₂O₃ and Ga₂O₃/(InGa)₂O₃ heterogeneous structures were fabricated. The built-in electric field induced by Type-I band alignment effectively suppresses the dark current of the Ga₂O₃/(InGa)₂O₃ device. Under 255 nm illumination at 10 V bias, the Ga₂O₃/(InGa)₂O₃ device exhibited superior performance, achieving a responsivity of 671.1 A/W and a high detectivity of 1.25 × 10¹⁵ Jones. These results significantly outperform the Ga₂O₃ device, demonstrating that the Ga₂O₃/(InGa)₂O₃ heterogeneous structure is a promising strategy for enhancing the performance of UV photodetectors.

DOI：

https://doi.org/10.1016/j.vacuum.2026.115578