【Epitaxy Papers】(001) β-Ga₂O₃ growth with low residual impurity from precursor by cold-wall MOCVD

      Researchers from University of Tsukuba have published a dissertation titled " (001) β-Ga₂O₃ growth with low residual impurity from precursor by cold-wall MOCVD " in Japanese Journal of Applied Physics.

Abstract

      We investigated the growth rates and impurity concentrations from the Ga precursor in (001) β-Ga₂O₃ homoepitaxial growth by cold-wall MOCVD. A growth rate above 0.8 μm/h was achieved with a triethylgallium (TEGa) flow rate of 9.9 μmol min⁻¹, corresponding to a Ga incorporation efficiency of 1.5×10³ μm·mol-1. The carbon and hydrogen concentrations were below 2×10¹⁷ cm^-3 under an optimized growth temperature and VI/III ratio. The surface morphology exhibited striped features parallel to the [010] direction with a root-mean-square roughness below 1 nm. These results indicate that TEGa is an excellent precursor for achieving high-quality growth of (001) β-Ga₂O₃.

DOI：

https://doi.org/10.35848/1347-4065/ae8592