【Member News】New Product Release | Garen Launches Semi-Insulating Ga₂O₃ Substrates for Photoconductive Switches, Advancing Ultra-High-Voltage Device Development

      1. Excellent crystal quality and atomically smooth surface. X-ray diffraction (XRD) rocking curve measurements show that the substrate achieves an ultra-low full width at half maximum (FWHM) of 29 arcsec, indicating high crystalline integrity and low defect density. Atomic force microscopy (AFM) measurements reveal an extremely low surface roughness of only 0.140 nm, reaching atomic-level smoothness. These outstanding substrate characteristics meet the stringent surface-quality requirements for advanced device fabrication and provide a solid foundation for the development of high-performance devices.

      2. The substrate exhibits excellent resistivity performance and superior switching-off characteristics. With a resistivity exceeding 1 × 10¹¹ Ω·cm, the substrate demonstrates outstanding semi-insulating properties, effectively suppressing dark-state leakage current. This enables devices to withstand high voltages in the off-state while maintaining low leakage levels, providing critical material support for achieving high on/off ratios and fast switching performance.

Figure 3. Resistivity measurement results of Garen Semiconductor’s semi-insulating substrate.

      3. Device-level validation demonstrates internationally leading performance. Based on semi-insulating substrates provided by Garen Semiconductor, a research team from the Shenzhen Pinghu Laboratory developed Mg-doped vertical photoconductive switches. Experimental measurements demonstrated a breakdown electric field exceeding 220 kV/cm, an on/off switching ratio reaching the 10¹¹ level, a breakdown voltage above 10,000 V, a dynamic on-resistance below 10 Ω, and an off-state switching time shorter than 1 ns. Multiple key performance metrics rank among the leading levels worldwide. The outstanding device performance further validates the high quality and reliability of Garen Semiconductor’s semi-insulating substrates.

Figure 4. Structure and performance characteristics of the Mg-doped Ga₂O₃ photoconductive switch (Image source: Shenzhen Pinghu Laboratory)

Figure 5. Garen Semiconductor substrate product portfolio.

      Key parameters, including doping schemes, substrate sizes, and crystal orientations, can be customized according to specific requirements to meet the needs of devices with different voltage ratings and response speed requirements. For further information on product details, please contact the sales and technical support teams of Garen Semiconductor.