【Member News】CR Micro Leads Release of Gallium Oxide Testing Standard, Advancing Ultra-Wide-Bandgap Semiconductor Standardization

      The release of this group standard marks a significant step forward in China's gallium oxide materials quality evaluation system, ushering in a new era of non-destructive, standardized, and high-precision characterization. It represents a key milestone in supporting the high-quality development of the ultra-wide-bandgap semiconductor industry.

      Centered on X-ray topography, the standard establishes a unified technical methodology for substrate defect inspection. It effectively addresses a long-standing bottleneck in defect characterization that has limited manufacturing yield while providing a solid foundation for improving device reliability from the material level.

      Against the backdrop of intensifying global competition, the implementation of this standard fills a domestic technological gap in gallium oxide defect characterization, strengthens China's leadership and influence in wide-bandgap semiconductor materials, and provides a robust standards framework for accelerating the transition of gallium oxide from material innovation to large-scale industrial application. It also lays an important foundation for building an independent and resilient industrial ecosystem, carrying significant strategic value.

      The development and release of this standard represent a collaborative achievement driven by coordinated efforts across the entire industrial chain, universities, and research institutions. As the leading organization, the CR Micro Central Research Institute played a key role in coordinating the design of the standard framework, validation of technical specifications, and drafting process. The Asian Gallium Oxide Alliance (AGOA) actively leveraged its role as an industry organization and collaborative platform, efficiently coordinating the alignment of tasks across different stages, technical discussions, and the collection of feedback, ensuring that the standard development process was conducted efficiently and systematically.

      This standard brings together leading research and industrial forces in China's gallium oxide field. Led by CR Micro (Wuxi) Co., Ltd., the standard was jointly drafted by the following organizations:

      Institute of Industrial Science and Technology, Wuhan University; Hangzhou Fuyang Gallium Oxide Industry Development Service Center (Asian Gallium Oxide Alliance); The 46th Research Institute of China Electronics Technology Group Corporation (CETC); Hangzhou Fujia Gallium Technology Co., Ltd.; Hangzhou Garen Semiconductor Co., Ltd.; Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (SIOM); Shandong University; Beijing GaChuang Technology Co., Ltd.; Suzhou GAO Semiconductor Co., Ltd.; Evolution Semiconductor (Shenzhen) Co., Ltd.; Beijing Mingjia Semiconductor Co., Ltd.; Ningbo Leijing Technology Co., Ltd.; and Tongji University.

      As an important practice in the standardization of the gallium oxide industry, the release of this standard will provide strong support for the future improvement of relevant standard systems. Meanwhile, the development and publication of this standard have laid a solid technical foundation and accumulated practical experience for the future formulation of the national standard “Non-Destructive Detection Method for Defects in Gallium Oxide Substrates.”

      Going forward, the CR Micro Central Research Institute will continue to deepen its efforts in areas including gallium oxide material quality evaluation and detection technology standards. The institute will actively participate in research and development of relevant national standards, contributing greater efforts to the enhancement of the industry’s standardization framework and strengthening China’s technological influence in the gallium oxide field.