【Member News】Focusing on Frontier Innovations and Exploring the Future: Fujia Gallium Showcases at the 19th National MOCVD Academic Conference

      On July 27–29, 2026, the 19th National Conference on MOCVD was held at the Huamao Hotel in Inner Mongolia. Fujia Gallium Technology Co., Ltd. participated in the exhibition with its products, including gallium oxide substrates, epitaxial wafers, and SBD devices. The company was also invited to deliver an academic presentation in Session 4, “Ultra-Wide Bandgap Semiconductors and Emerging Interdisciplinary Frontiers,” showcasing its latest achievements in gallium oxide epitaxy technologies and industrialization.

      On the morning of July 29, Dr. Chen Duanyang, Deputy General Manager of Fujia Gallium Technology Co., Ltd., delivered an invited presentation titled “Advances in Ga₂O₃ MOCVD Homoepitaxy Technology and Industrialization.”

      During the presentation, Fujia Gallium showcased its latest research achievements for the first time: the company has successfully extended its 8-inch Ga₂O₃ epitaxial process to 12-inch wafers, achieving a thickness variation of less than 6% across the 12-inch epitaxial layer, marking a global first.

      Dr. Chen highlighted that Fujia Gallium began developing Ga₂O₃ MOCVD epitaxy technology in 2021. By leveraging machine learning-assisted MOCVD process development and conducting a series of process optimizations, the company has achieved mature 6-inch and 8-inch Ga₂O₃ homoepitaxy technologies, with epitaxial wafer performance reaching an internationally leading level.

      Building on the superior performance of its epitaxial wafers, Fujia Gallium has collaborated with downstream partners on device development and achieved a series of breakthroughs, enabling the integration of Ga₂O₃ power device development across the entire value chain.

      Following its leadership in drafting the first national standard in the Ga₂O₃ field, “Test Method for Dislocation Density Measurement in Single Crystal Polished Wafers of Gallium Oxide by X-ray Topography,” Fujia Gallium is now leading the development of another pioneering national standard on electrical performance testing: “Measurement of Carrier Concentration in Gallium Oxide Epitaxial Layers — Capacitance-Voltage Method.” This represents another milestone in advancing standardization within the Ga₂O₃ industry.

      The National MOCVD Conference is one of China's most influential academic platforms for epitaxial materials and semiconductor epitaxy. By participating both as an exhibitor and an invited speaker, Fujia Gallium further strengthened its collaboration with leading domestic research groups and industry partners, laying a solid foundation for accelerating the large-scale application of Ga₂O₃ power devices.

      Taking this conference as an opportunity, Fujia Gallium will continue to advance the industrialization of Ga₂O₃ materials. Guided by its mission of " Bringing Better Materials to the World," the company remains committed to contributing to the rapid development of the ultra-wide-bandgap.