【Member News】Ultra-Wide Bandgap Semiconductor Technology Forum to Open on August 27, with AGOA Member Companies Exploring the Future of the Industry Together

      In recent years, third-generation semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have gradually entered the stage of large-scale application, with increasingly mature industrial ecosystems and well-established technical exchange platforms. In contrast, ultra-wide bandgap semiconductors represented by gallium oxide and diamond are emerging as important candidates for next-generation power electronics and optoelectronic devices, owing to their potential advantages including higher critical electric fields and superior high-voltage endurance capabilities.

      With China’s 15th Five-Year Plan placing emphasis on the development of frontier semiconductor materials such as diamond and gallium oxide, the ultra-wide bandgap semiconductor industry is currently accelerating its transition from fundamental research and material fabrication toward device development and industrialization. Compared with the mature applications of SiC and GaN, ultra-wide bandgap semiconductor technologies are still at a distinct stage of development, characterized by ongoing breakthroughs in materials, devices, and commercialization pathways.

      To promote technological exchange and industrial collaboration in the field of ultra-wide bandgap semiconductors, the “Ultra-Wide Bandgap Semiconductor Frontier Technology Forum”, jointly organized by PCIM Asia Shenzhen and Shenzhen Pinghu Laboratory, will be held on August 27 at the A60 Forum Area, Hall 16 of Shenzhen World Exhibition & Convention Center (Bao’an New Venue).

      The forum will focus on cutting-edge developments in ultra-wide bandgap semiconductors, including gallium oxide, diamond, and aluminum nitride (AlN). It will bring together experts and industry representatives from Asian Gallium Oxide Alliance (AGOA) member organizations, including Shenzhen Pinghu Laboratory, Xidian University, Hangzhou Garen Semiconductor, and Hangzhou Fujia Gallium Technology Co., Ltd., as well as institutions and companies such as the Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hangzhou Ultratrend Technologies Inc, and Ningbo Crysdiam Industrial Technology Co., Ltd.‌‌‌.

      The invited speakers will deliver six keynote presentations focusing on key topics and perspectives in ultra-wide bandgap semiconductor technologies, jointly exploring technological development pathways and emerging opportunities for industrial advancement.

      The organization of this forum will further strengthen industry–academia–research collaboration in the ultra-wide bandgap semiconductor field, promote technical interaction across materials, equipment, devices, and applications, and provide an important platform for exchange and cooperation to support innovation and growth in next-generation semiconductor industries.