【Epitaxy Papers】(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β-Ga₂O₃ homoepitaxial layers on (011) substrates

      Researchers from National Institute for Materials Science have published a dissertation titled " (110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β-Ga₂O₃ homoepitaxial layers on (011) substrates " in Japanese Journal of Applied Physics.

Abstract

      The surface morphology of the homoepitaxial layer grown on a (011) β-Ga₂O₃ substrate by HCl-based halide vapor phase epitaxy was investigated using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The surface consisted of (110) and (−134) facets elongated along [1−11], with facet coverage ratios of 0.207:0.793 (AFM) and 0.210:0.790 (TEM), in close agreement with the geometrically expected ratio of 0.219:0.781. Thus, the surface can be regarded as being composed of (110) macrosteps and (−134) terraces. These findings indicate that growth kinetics and impurity incorporation should be discussed based on the actual (110) and (−134) faceted morphology, rather than the nominal (011) substrate orientation.

DOI：

https://doi.org/10.35848/1347-4065/ae83f5