Patents
【Patenes】Gallium Oxide Patent Weekly Report (Issue 7, August)
日期：2026-08-21阅读：342
To further strengthen information exchange within the gallium oxide industry and help stakeholders stay informed of the latest technological developments, the Asian Gallium Oxide Alliance (AGOA) has launched the Gallium Oxide Patent Weekly column. This series will continuously compile and publish newly disclosed patent applications and technological advances in the gallium oxide field.
As an important indicator of technological innovation, patents reflect R&D trends and strategic layout across the industrial chain. This column focuses on crystal growth, material preparation, defect engineering, device development, process optimization, and emerging applications, providing enterprises, universities, and research institutes with insights into technology trends while supporting the continued development of the gallium oxide industry.
This seventh issue reviews gallium oxide-related patent applications published during the second week of August 2026 (August 10 – August 16).
1.A Silicon Carbide-Based Gallium Oxide MOSFET Device (Published August 11)
According to information from the China National Intellectual Property Administration (CNIPA), Yongjiang Laboratory has filed a patent application titled “A Silicon Carbide-Based Gallium Oxide MOSFET Device,” with Publication No. CN122555191A and Application No. 2026110310134.
This application relates to the field of semiconductor technology and proposes a silicon carbide-based gallium oxide MOSFET device. The device comprises, from bottom to top, a silicon carbide substrate layer, a functional intermediate layer, and a gallium oxide channel layer. The functional intermediate layer has a thermal conductivity of >1 W·cm⁻¹·K⁻¹ and a bandgap of >4.0 eV.
The functional intermediate layer can, on the one hand, suppress the diffusion of the high-voltage electric field toward the silicon carbide substrate, thereby significantly improving the device's three-terminal breakdown voltage. On the other hand, its high thermal conductivity enables rapid heat dissipation from the channel, effectively mitigating the self-heating effect in gallium oxide devices and reducing channel temperature rise under high-power operation. It can also buffer lattice mismatch at the heterointerface and reduce interface defects, thereby improving the device's voltage-blocking and thermal-management capabilities while maintaining favorable electrical transport performance.
2.Lateral Enhancement-Mode Gallium Oxide Transistor with a Selective Trench Current-Blocking Region (Published August 11)
According to information from the China National Intellectual Property Administration (CNIPA), University of Electronic Science and Technology of China (UESTC) has filed a patent application titled “Lateral Enhancement-Mode Gallium Oxide Transistor with a Selective Trench Current-Blocking Region,” with Publication No. CN122555205A and Application No. 2026108782067.
This invention relates to the field of power semiconductors and proposes a lateral enhancement-mode gallium oxide transistor with a selective trench current-blocking region.
Under zero-bias conditions, the current-blocking region, together with the p-type semiconductor layer, depletes the channel to realize enhancement-mode operation and increase the threshold voltage. Under forward conduction, the selective trench and p-type semiconductor layer increase the channel density, while an electron accumulation layer formed along the channel sidewalls provides a conductive path, thereby reducing the on-state resistance and improving current capability.
Under forward blocking conditions, the current-blocking region suppresses leakage current. Meanwhile, a toothed heterojunction gate-stepped field plate, combined with a patterned source field plate and stepped doping in the drain region, mitigates electric-field concentration and optimizes the electric-field distribution in the lateral, vertical, and perpendicular directions, thereby increasing the breakdown voltage.
Overall, the proposed device combines high threshold voltage, low on-state resistance, and high breakdown voltage, offering a structural approach for improving the performance of lateral enhancement-mode Ga₂O₃ power transistors.
3.Gallium Oxide Diodes with Ammonia Plasma Treatment for Interface Engineering (Published August 11)
According to information from the China National Intellectual Property Administration (CNIPA), Rongjia (Chengdu) Semiconductor Co., Ltd. has filed a patent application titled “Method and Device for Interface Engineering of Gallium Oxide Diodes Based on Ammonia Plasma Treatment,” with Publication No. CN122555169A and Application No. 2026106741626.
The invention relates to semiconductor technology and proposes an ammonia-plasma treatment method for regulating the interface of Ga₂O₃ diodes.
The method begins with a Ga₂O₃ sample consisting of a substrate and a Ga₂O₃ drift layer formed on the substrate. Ohmic-contact electrodes are first fabricated in predetermined electrode regions. The sample is then subjected to ammonia plasma treatment, forming an interface-engineering region on the surface of the Ga₂O₃ drift layer.
Depending on the target device structure, diode electrodes are subsequently fabricated on the interface-engineering region to form Schottky barrier diodes (SBDs), heterojunction diodes, or heterojunction barrier Schottky (HBS) diodes.
The proposed treatment is intended to modify the surface chemical states and defect distribution of Ga₂O₃, reduce interface-state density and reverse leakage current, while increasing breakdown voltage and reducing on-state resistance, thereby improving the overall electrical performance of Ga₂O₃-based diode devices.
4.Deep-UV Transparent and Highly Conductive Gallium Oxide Electrode and Preparation Method (Published August 11)
According to information from the China National Intellectual Property Administration (CNIPA), Wuhan Textile University and Hubei University have jointly filed a patent application titled “Deep-UV Transparent and Highly Conductive Gallium Oxide Electrode and Preparation Method,” with Publication No. CN122555299A and Application No. 2026106687602.
The invention relates to the field of transparent conductive electrodes and discloses a deep-ultraviolet (DUV) transparent and highly conductive gallium oxide electrode and its preparation method. The electrode comprises a substrate and a highly conductive gallium oxide epitaxial film formed on the substrate. The epitaxial film has a carrier concentration above [value not provided], mobility above [value not provided], and resistivity below [value not provided].
The preparation method includes providing a substrate, a metal-source precursor consisting of a metal coated with powder, an oxygen-source gas, and a dopant. A vapor-phase epitaxy process is then employed. Under conditions with a growth-zone temperature of 900–1400°C and a source-zone temperature of 1100–1500°C, a carrier gas transports gaseous gallium suboxide and the gaseous dopant to the substrate surface, where they react with the oxygen-source gas to grow the epitaxial film.
5.Barium Titanate/Gallium Oxide Heterojunction Pyroelectric Photodetector and Preparation Method (Published August 11)
According to information from the China National Intellectual Property Administration (CNIPA), Southeast University has filed a patent application titled “Barium Titanate/Gallium Oxide Heterojunction Pyroelectric Photodetector and Preparation Method,” with Publication No. CN122555375A and Application No. 2026105001747.
The invention discloses a barium titanate/gallium oxide heterojunction pyroelectric photodetector and its preparation method. The device comprises a substrate, a Ga₂O₃ light-absorbing layer formed on the substrate, and a barium titanate (BaTiO₃) pyroelectric layer formed on the Ga₂O₃ layer.
The Ga₂O₃ light-absorbing layer has a thickness of 5–500 nm and may adopt any one of the α, β, γ, δ, or ε phases. The BaTiO₃ pyroelectric layer has a thickness of 5–100 nm and adopts the tetragonal phase. A first electrode is formed on the upper surface of the Ga₂O₃ light-absorbing layer, while a second electrode is formed on the upper surface of the BaTiO₃ pyroelectric layer.
By constructing the BaTiO₃/Ga₂O₃ heterojunction, the device takes advantage of the Ga₂O₃ layer's efficient absorption of solar-blind ultraviolet light, while coupling the pyroelectric effect of BaTiO₃ with the photovoltaic effect of the heterojunction. This promotes the effective separation and transport of photogenerated carriers, enabling zero-bias operation and providing advantages including self-powered operation, high responsivity, and fast response.
6.Diamond/Gallium Oxide Photodetector and Preparation Method (Published August 14)
According to information from the China National Intellectual Property Administration (CNIPA), Jihua Laboratory has filed a patent application titled “Diamond/Gallium Oxide Photodetector and Preparation Method,” with Publication No. CN122579747A and Application No. 2026110607973.
The application relates to the field of photodetectors and provides a diamond/gallium oxide photodetector and its preparation method.
The method comprises the following steps: first, a composite thin-film structure is grown on a temporary growth substrate. The composite thin-film structure is then detached from the temporary growth substrate. Next, the structure is transferred and bonded onto a flexible conductive substrate by bringing an n-type GaN film into contact with the conductive layer of the flexible substrate. A top electrode is subsequently formed on the p-type diamond film, resulting in a vertically structured diamond/gallium oxide photodetector. The bottom electrode of the device is provided by the conductive layer of the flexible conductive substrate.
The proposed method addresses key challenges in existing diamond/gallium oxide heterojunction devices. In particular, diamond is susceptible to oxidation and degradation under high-temperature, oxygen-rich conditions, making interface quality difficult to control. In addition, both diamond and gallium oxide are hard and brittle materials, which limits their application in flexible electronics. The proposed transfer and bonding approach is therefore intended to improve the manufacturability of diamond/gallium oxide heterojunction photodetectors while enabling their integration with flexible conductive substrates.
7.P-Type-Free Vertical Trench MOSFET Device and Preparation Method (Published August 14)
According to information from the China National Intellectual Property Administration (CNIPA), Beijing Changlong Zhixin Semiconductor Co., Ltd. has filed a patent application titled “P-Type-Free Vertical Trench MOSFET Device and Preparation Method,” with Publication No. CN122579668A and Application No. 202610892667X.
The invention discloses a P-type-free vertical trench MOSFET device and its preparation method, relating to the field of power semiconductors. The device comprises a β-Ga₂O₃ substrate, an N-type drift layer, a source region, a drain region, a vertical trench, an N-type channel-control region, a gate dielectric layer, and a trench gate.
The source region, N-type channel-control region, and N-type drift layer are all N-type conductive structures. The trench gate is electrically isolated from the N-type channel-control region by the gate dielectric layer, enabling electric-field modulation, while no P-type well region is incorporated into the device.
The N-type drift layer is a Si-doped β-Ga₂O₃ epitaxial layer. The gate dielectric layer is composed of SiO₂, Al₂O₃, HfO₂, or a composite layer. The trench gate may be formed from polysilicon, tungsten, molybdenum, or titanium nitride.
The preparation method includes epitaxial growth of the N-type drift layer, etching to form the vertical trench, formation of the N-type channel-control region, deposition of the gate dielectric layer and trench gate, formation of ohmic contacts for the source and drain, followed by alloy annealing and passivation.
The proposed device eliminates the dependence on a P-type well and PN-junction structure, providing an alternative device architecture for β-Ga₂O₃ vertical trench MOSFETs.
8.Gallium Oxide Thin Film, Preparation Method Therefor, and Application Thereof (Published August 14)
According to information from the China National Intellectual Property Administration (CNIPA), Yongjiang Laboratory has filed a patent application titled “Gallium Oxide Thin Film, Preparation Method Therefor, and Application Thereof,” with publication number CN122564467A and application number 202610837804X.
The present application provides a gallium oxide thin film, as well as a preparation method and applications thereof. The preparation method includes the following steps: providing a gallium oxide ceramic target, wherein the gallium oxide ceramic target contains one of Si–Sn co-doping, Zr–Sn co-doping, and Hf–Sn co-doping, with a Sn doping concentration of 0.5–1 mol% and Si, Zr, or Hf doping concentrations greater than 0 and up to 1 mol%; placing a substrate in a deposition chamber and adjusting the distance between the substrate and the gallium oxide ceramic target; evacuating the deposition chamber to a vacuum level below 10⁻⁵ Pa; heating the substrate to 550–650 °C; maintaining a constant deposition-chamber temperature and using pulsed laser deposition (PLD) to grow a gallium oxide thin film on the substrate surface; maintaining an oxygen pressure of no more than 40 mTorr; and performing in-situ annealing in the deposition chamber while maintaining the same oxygen pressure as during deposition, thereby obtaining the gallium oxide thin film.
By controlling the substrate heating temperature, oxygen pressure, and the doping concentrations of Sn, Si, Zr, and Hf, the present application enables the growth of high-quality gallium oxide thin films and effective tuning of their resistivity.
9.Method for Preparing Large-Area Two-Dimensional Gallium Oxide Thin Films Using Liquid Gallium (Published August 14)
According to information from the China National Intellectual Property Administration (CNIPA), South China Normal University has filed a patent application titled “Method for Preparing Large-Area Two-Dimensional Gallium Oxide Thin Films Using Liquid Gallium,” with publication number CN122564544A and application number 2026107605385.
The invention relates to the field of semiconductor thin-film material preparation and provides a method for preparing large-area two-dimensional gallium oxide thin films using liquid gallium. The method includes the following steps: sequentially cleaning a silicon substrate with a SiO₂ layer using solvent ultrasonication and activating the substrate surface by oxygen plasma treatment; heating metallic gallium to obtain liquid gallium and removing the aged oxide layer from the surface of the liquid gallium; immersing the surface of the pretreated silicon substrate into the liquid gallium and forming an inclined angle between the substrate surface and the surface of the liquid gallium; withdrawing the silicon substrate at a predetermined speed so that a two-dimensional gallium oxide thin film is formed on the substrate surface through van der Waals forces; wiping residual gallium droplets accumulated at the edge of the silicon substrate using heated anhydrous ethanol; and performing high-temperature annealing to obtain the large-area two-dimensional gallium oxide thin film.
The invention addresses the issues of limited film size and low raw-material utilization associated with the preparation of gallium oxide thin films using van der Waals printing processes, enabling the efficient preparation of large-area gallium oxide thin films.
10.Thick Gallium Oxide Homoepitaxial Film and Method for Preparing the Same (Published August 14)
According to information from the China National Intellectual Property Administration (CNIPA), Hangzhou Gallium Ren Semiconductor Co., Ltd. has filed a patent application titled “Thick Gallium Oxide Homoepitaxial Film and Method for Preparing the Same,” with publication number CN122564751A and application number 2026107062675.
The invention provides a thick gallium oxide homoepitaxial film and a method for preparing the same, and belongs to the field of microelectronics technology. The method includes thermally oxidizing a substrate to obtain a thermally oxidized substrate, followed by epitaxial growth on the thermally oxidized substrate to form a buffer layer. A first hydride vapor phase epitaxy (HVPE) process is then performed on the buffer layer to form a low-growth-rate layer, followed by a second HVPE process on the low-growth-rate layer to form a high-growth-rate layer. The high-growth-rate layer is subsequently subjected to surface defect reduction and thermal oxidation repair to obtain the gallium oxide homoepitaxial thick film, with a thickness of more than 20 μm.
The proposed preparation method enables the growth of gallium oxide thick films exceeding 20 μm. By combining the first and second HVPE growth processes to establish a step-flow growth mode, the method can also reduce the formation of surface defects.
11.Niobium-Doped Gallium Oxide Epitaxial Film, Preparation Method, and Photodetector (Published August 14)
According to information from the China National Intellectual Property Administration (CNIPA), Hunan University and Changsha Institute of Semiconductor Technology and Application Innovation have jointly filed a patent application titled “Niobium-Doped Gallium Oxide Epitaxial Film, Preparation Method, and Photodetector,” with publication number CN122564745A and application number 2026105304932.
The invention relates to semiconductor technology and provides a niobium-doped gallium oxide epitaxial film, a preparation method thereof, and a photodetector. The preparation method comprises the following steps:
S1: Preheating the substrate to 450–500°C in an inert atmosphere.
S2: Placing a precursor solution containing a niobium source and a gallium source into an atomizer and introducing it into the reaction chamber with a carrier gas. Epitaxial growth is then performed on the substrate under an inert atmosphere for 2–4 hours, followed by annealing to obtain the niobium-doped gallium oxide epitaxial film.
In the precursor solution containing the niobium and gallium sources, the molar ratio of niobium to gallium is 0.1–1.0:100.
By adjusting the concentration of the niobium source in the precursor, the invention enables the high-quality single-crystal growth of gallium oxide thin films. Within a doping concentration range of 0.1%–1.0%, the resulting gallium oxide single-crystal films achieve their optimal material quality and physical properties.
In addition to patents focusing on gallium oxide materials, several patents published this week also involve the application of gallium oxide as a functional material in other fields, which are provided for readers’ reference.
1.Solid Spherical β-Ga₂O₃ Powder and Preparation Method (Published August 14)
According to information from the China National Intellectual Property Administration (CNIPA), Chaozhou Branch of Guangdong Laboratory of Chemistry and Fine Chemicals has filed a patent application titled “Solid Spherical β-Ga₂O₃ Powder and Preparation Method,” with publication number CN122562029A and application number 2026110581649.
The invention discloses a solid spherical β-Ga₂O₃ powder prepared using a gallium nitrate solution as the starting material. Sodium dodecyl sulfate (SDS) is used as a surfactant together with ammonia water to prepare a gallium oxyhydroxide precursor. The precursor is then dried and calcined to obtain the solid spherical β-Ga₂O₃ powder, which has a particle size of 0.75–3.21 μm.
The invention also discloses a preparation method for the solid spherical β-Ga₂O₃ powder described above. By using sodium dodecyl sulfate as the surfactant, the method enables the preparation of spherical gallium oxide powder through a relatively simple process requiring only one surfactant.
The resulting spherical β-Ga₂O₃ powder features simple processing, good reproducibility, and relatively good crystallinity, providing a straightforward approach for preparing β-Ga₂O₃ powders with controlled spherical morphology.
2.Multi-Doped Low-Resistivity, Easily Sinterable ZnO Target and Preparation Method (Published August 14)
According to information from the China National Intellectual Property Administration (CNIPA), Zhengzhou University, Zhongyuan Key Metal Laboratory, and Fujian Acetron New Materials Co.,Ltd have filed a patent application titled “Multi-Doped Low-Resistivity, Easily Sinterable ZnO Target and Preparation Method,” with publication number CN122562517A and application number 2026109681275.
The invention belongs to the field of oxide target materials, and specifically relates to a multi-doped ZnO target featuring low resistivity and improved sinterability. The ZnO target is prepared from zinc oxide, aluminum oxide, gallium oxide, titanium oxide, zirconium oxide, and vanadium pentoxide.
Through the synergistic effect of high-valence-state doping and liquid-phase sintering, the proposed method simultaneously achieves a significant reduction in electrical resistivity and a substantial decrease in sintering temperature, providing an approach for improving the electrical and processing properties of ZnO sputtering targets.
3.Catalyst for Methanol Production from Biomass Gasification Syngas, Preparation Method and Application (Published August 14)
According to information from the China National Intellectual Property Administration (CNIPA), Guangdong Energy Group Science and Technology Research Institute Co., Ltd. has filed a patent application titled “Catalyst for Methanol Production from Biomass Gasification Syngas, Preparation Method and Application,” with publication number CN122558485A and application number 2026107766584.
The invention relates to a catalyst for producing methanol from biomass gasification syngas, as well as its preparation method and application. The catalyst comprises a composite metal oxide, in which the metal elements include copper, zinc, indium, and gallium.
The presence of copper oxide and zinc oxide promotes the efficient conversion of syngas, while gallium oxide and indium oxide provide active sites for the activation and hydrogenation conversion of carbon dioxide in the syngas. As a result, the catalyst exhibits good catalytic performance and high reaction activity.
When applied to the conversion of biomass gasification syngas for methanol production, the catalyst improves methanol production performance, offering advantages including high reaction activity, high methanol yield, and good reaction stability.
