【Device Papers】Solar-blind optoelectronic synapses enabled by amorphous Ga₂O₃/SiC heterostructure

      Researchers from the Nantong University have published a dissertation titled "Solar-blind optoelectronic synapses enabled by amorphous Ga₂O₃/SiC heterostructure" in Applied Physics Letters.

Abstract

      Solar-blind optoelectronic synapses are attractive for front-end neuromorphic processing under deep-ultraviolet illumination, yet Ga₂O₃-based two-terminal systems remain largely confined to electrically driven memristive switching. Here, we demonstrate a sputtered amorphous Ga₂O₃/SiC heterostructure for two-terminal solar-blind optoelectronic synaptic operation. Ga₂O₃ provides solar-blind absorption, while the SiC region serves as the transport/readout channel, enabling separation of optical excitation and electrical conduction. The device exhibits excitatory postsynaptic current, paired-pulse facilitation, tunable short-term-to-long-term memory, and learning-forgetting-relearning behavior under 254 nm pulses. Results indicate that the synaptic behavior is governed by solar-blind absorption in Ga₂O₃, interfacial charge transfer, and defect-mediated relaxation. This work offers a scalable heterostructure approach for solar-blind neuromorphic optoelectronic devices.

DOI：

https://doi.org/10.1063/5.0346650