【Others Papers】Performance study of linear ZnO/Ga₂O₃ nanorod array photoelectrochemical ultraviolet detector

      Researchers from Lanzhou University have published a dissertation titled " Performance study of linear ZnO/Ga₂O₃ nanorod array photoelectrochemical ultraviolet detector " in 《物理学报》。

Abstract

      One-dimensional nanorod arrays (NRAs) heterostructures possess various advantages such as direct charge transfer channels and built-in electric fields, making them ideal structures for fabricating high-performance optoelectronic devices. In this study, ZnO/α-Ga₂O₃ nanorod arrays (NRAs) heterostructures were prepared on a titanium wire substrate using the hydrothermal method, and served as the photoanode for a photoelectrochemical (PEC) ultraviolet (UV) detector. On one hand, the built-in electric field generated by the ZnO/α-Ga₂O₃ heterojunction enhances the separation efficiency of photogenerated carriers. On the other hand, the coating of Ga₂O₃ on ZnO NRAs not only reduces the surface states of the photoanode but also, more importantly, acts as a barrier layer to reduce carrier recombination at the solid-liquid interface. Under UV irradiation of 200 μW cm^-2, the photocurrent density of the ZnO/α-Ga₂O₃ NRA photoanode UV detector reaches 38.4 μA cm^-2, with a responsivity of 0.17 A/W, which is 1.55 times that of the ZnO NRA photoanode. Furthermore, this linear detector exhibits good linear response to UV light within the range of 0 to 360°. This research provides insights into improving the separation efficiency of photogenerated carriers in PEC UV detectors and reducing recombination at the solid-liquid interface.

Link：

https://kns.cnki.net/kcms2/article/abstract?v=gvg-iIm8s3Nukouh8XY_IfAV92AZSLol6NayxQTOFgnZsmwTF2X-jUEH0kMVxkMDl5tXg2Dws2f0PwZ9U8lKv9iPqTyIBOmhiR5unrFY4eXUbyaa4VYxIMujCpjM6xAMjD5oeLQYHAHMbKjObWS1DQkddLrbTAF3vl09fmrnKGcZrnJR3qbryg==&uniplatform=NZKPT&language=CHS