【Others Papers】Magnetic phase transition driven by ferroelectric polarization and strain in a multiferroic CrMoGe₂S₆/Ga₂O₃ van der Waals heterostructure

      Researchers from Nanjing University of Posts and Telecommunications have published a dissertation titled " Magnetic phase transition driven by ferroelectric polarization and strain in a multiferroic CrMoGe₂S₆/Ga₂O₃ van der Waals heterostructure " in Journal of Alloys and Compounds.

Abstract

      Two-dimensional (2D) multiferroic heterostructures provide an effective platform for ferroelectric control of magnetism, while strain engineering offers an additional tuning degree of freedom. Using first-principles calculations, the magnetic properties of the CrMoGe₂S₆/Ga₂O₃ van der Waals heterostructure (vdWH) are systematically investigated over a strain range from −4% to 4%. The results indicate that tensile strain has a strong influence on the magnetic ground state of the CrMoGe₂S₆/Ga₂O₃ vdWH, and the magnetic state can be reversibly switched by ferroelectric polarization at a critical tensile strain. Notably, at a tensile strain of 1.5%, the magnetic phase of the CrMoGe₂S₆ layer can be reversibly controlled by the polarization direction of the Ga₂O₃ layer, with the P↑ and P↓ states corresponding to antiferromagnetic (AFM) and ferromagnetic (FM) states, respectively. This magnetic phase transition is accompanied by a distinct electronic switching from a semiconductor to a half-metal. Based on these results, a nonvolatile magnetoelectric device concept based on the CrMoGe₂S₆/Ga₂O₃ vdWH operating at 1.5% tensile strain is further proposed. These findings demonstrate that the combined effects of strain and ferroelectric polarization provide an effective route for tuning magnetic and electronic properties in two-dimensional layered heterostructures.

DOI：

https://doi.org/10.1016/j.jallcom.2026.189913