【Device Papers】Performance analysis and research on Ga₂O₃-Si Schottky diodes based on bonding technology

      Researchers from University of Chinese Academy of Sciences‌ have published a dissertation titled " Performance analysis and research on Ga₂O₃-Si Schottky diodes based on bonding technology " in 《微电子学》.

Abstract

      Addressing the issues of heat accumulation and edge breakdown faced by gallium oxide (Ga₂O₃) power devices in high-voltage applications, a Ga₂O₃-Si Schottky barrier diode (SBD) structure, constructed based on a hetero-bonding process, is proposed. This structure combines the high breakdown characteristics of Ga₂O₃ with the heat dissipation capabilities of the Si substrate. The hetero-integration of Ga₂O₃ and Si is achieved using surface activation bonding (SAB) technology, and its rectification characteristics are verified through experiments. Based on measured data, the effects of SiO₂ passivation structure, Ga₂O₃ thickness, and interface trap density (D_it) on current, electric field, heat distribution, and breakdown behavior in the device are systematically analyzed using the TCAD platform. Simulation results show that the passivation structure concentrates current and electric field at the Schottky electrode, significantly enhancing the breakdown voltage. With a 25 μm thickness of Ga₂O₃, the device's breakdown voltage can reach 6 kV, and heat can be efficiently released through the bonding interface. High interface trap density induces Fermi level pinning, inhibiting current injection. The research results provide theoretical basis and simulation support for the structural optimization and hetero-integration process optimization of Ga₂O₃ power devices.

DOI： 

10.13911/j.cnki.1004-3365.250225