【Device Papers】Self-powered transparent ultraviolet photodetector based on GZO/β-Ga₂O₃ heterostructure for solar-blind imaging applications

      Researchers from Changchun University of Technology have published a dissertation titled " Self-powered transparent ultraviolet photodetector based on GZO/β-Ga₂O₃ heterostructure for solar-blind imaging applications " in Materials Science in Semiconductor Processing.

Abstract

      The rapid development of transparent electronic materials and energy-efficient photodetectors has made self-powered transparent ultraviolet (UV) photodetectors highly promising for solar-blind imaging applications. In this work, a self-powered GZO/β-Ga₂O₃ heterostructure solar-blind UV photodetector has been constructed for the first time via metal−organic chemical vapor deposition (MOCVD) and radio frequency (RF) magnetron sputtering. At 0 V bias, our device exhibits a responsivity of approximately 1.63 mA/W, a photo-to-dark current ratio of 1.2 × 10³, and a specific detectivity of 7.06×10¹⁰ Jones, indicating excellent self-powered solar-blind UV photodetection performance. Moreover, we demonstrate the practicality of the transparent device in solar-blind imaging by fabricating a photodetector array consisting of 16 individual units, which generates clear high-contrast images due to the high uniformity and sensitivity of the array. Our findings pave a feasible way to realize self-powered β-Ga₂O₃-based heterostructure UV photodetectors for solar-blind imaging and energy-conserving transparent electronic applications.

DOI：

https://doi.org/10.1016/j.mssp.2026.111040