【Domestic News】Fuzhou University’s Ga₂O₃ Team Earns Further National Recognition, with Major Progress in Commercialization

      Congratulations to Professor Haizhong Zhang of the College of Physics and Information Engineering at Fuzhou University on receiving funding from the National Natural Science Foundation of China (NSFC) General Program for the project entitled “Study on Nitrogen-Doped Ga₂O₃ CBL-Based Vertical MOSFET Devices and Their Mechanisms.”

      This marks another recognition at the national level of the Fuzhou University team’s fundamental and innovative research on high-voltage Ga₂O₃ power devices, a key area of fourth-generation semiconductor technology.

      The core members of the Ga₂O₃ team at Fuzhou University are graduates of leading universities in China and abroad and have extensive experience in the R&D and management of major research projects. With years of technical expertise in Ga₂O₃, the team has established full-chain R&D capabilities spanning materials epitaxy, device design, and process integration, and has achieved a series of innovative research results with independent intellectual property rights.

      The team was the first in China to apply AI-assisted technology to the epitaxial growth of Ga₂O₃ materials, effectively addressing the complex thermodynamic and kinetic control challenges involved in epitaxial growth and enabling efficient, low-cost epitaxy.

      It also reported the first in-situ epitaxial p-type doping technology for Ga₂O₃ in China, enabling greater flexibility in the design of high-voltage Ga₂O₃ devices. The resulting research was awarded a Gold Award in the Industry Track of the Ministry of Education’s innovation and entrepreneurship competition and was featured in a special report by CCTV-13.

      In addition, through fine optimization of electric-field distribution and the development of proprietary process technologies, the team has fabricated multiple power devices with different voltage ratings based on simple, production-scalable device structures. In 2024, the team successfully developed a Ga₂O₃ Schottky barrier diode (SBD) with a breakdown voltage of 3,110 V and a specific on-resistance of 4.4 mΩ·cm². The work was accepted for presentation at ISPSD 2024, a leading international conference on power semiconductor devices.

      The team is currently working to translate its innovative research achievements into commercial products and has established Quanjia Technology Co., Ltd., whose core business covers the R&D and manufacturing of Ga₂O₃ epitaxial wafers, power devices, RF devices, and ultraviolet optoelectronic chips.

      The company has received recognition through programs including the “Hundred Talents Program” of Fujian Province and the “Double Hundred Plan” of Xiamen.

      Following the completion of its first round of financing, the company plans to establish China’s first quasi-IDM mini-line integrating Ga₂O₃ epitaxial growth and wafer fabrication, providing the industry with high-quality Ga₂O₃ epitaxial wafers, wafer-fabrication foundry services, testing, and technical consulting.

      We would like to express our sincere gratitude to Beijing Mingjia, Fujia Gallium, Garen Semiconductor, Xiamen University, National University of Defense Technology, the Asian Gallium Oxide Alliance (AGOA), and other organizations for their strong support of our team.

      We welcome exchanges and collaboration with fellow researchers and industry colleagues, and sincerely appreciate any comments or suggestions.

      Contact: Shurui Ye

      Tel: +86 151 6014 3752