【Device Papers】High-Mobility Indium Gallium Oxide TFTs Fabricated from an Aqueous Precursor with Excimer-Light Activation

      Researchers from Osaka Institute of Technology have published a dissertation titled " High-Mobility Indium Gallium Oxide TFTs Fabricated from an Aqueous Precursor with Excimer-Light Activation " in ECS Journal of Solid State Science and Technology.

Abstract

      A 172 nm excimer-light-assisted aqueous process enables low-temperature formation of polycrystalline In₂O₃ thin films at 200 °C and achieves mobilities exceeding 100 cm^²/V·s after optimized annealing. Ga incorporation suppresses interface traps and hysteresis while preserving high mobility, providing a scalable, vacuum-free, low-thermal-budget route to high-performance oxide backplanes.

DOI：

https://doi.org/10.1002/sdtp.70001_460