【Device Papers】Junction-All-Around WSe₂/β-Ga₂O₃ p-n Heterojunction Transistor with Ultra-High Mobility Enabling NDR-Based Multilevel Logic and Memory

      Researchers from Seoul National University have published a dissertation titled " Junction-All-Around WSe₂/β-Ga₂O₃ p-n Heterojunction Transistor with Ultra-High Mobility Enabling NDR-Based Multilevel Logic and Memory " in ECS Meeting Abstracts.

Abstract

      β-gallium oxide (β-Ga₂O₃) has attracted significant attention as a next-generation wide-bandgap semiconductor owing to its ultra-wide bandgap (4.9 eV) and strong potential to overcome the intrinsic limitations of silicon (Si) in high-power and high-frequency electronics. With the rapid expansion of artificial intelligence (AI) and high-performance computing systems, there is an urgent demand for semiconductor platforms capable of sustaining high power density and fast switching operation, while simultaneously supporting increasingly complex computing paradigms beyond conventional Boolean logic, such as energy-efficient process-in-memory (PIM) architectures that integrate logic and memory within a single platform. While conventional Si-based devices are fundamentally limited by their low on/off ratio and mobility constraints, β-Ga₂O₃ offers a promising alternative in terms of operational robustness and power handling capability. Nevertheless, the inherently low field-effect mobility of β-Ga₂O₃—typically on the order of ~20 cm²/V∙s in conventional transistor architectures—remains a critical bottleneck, restricting both high-speed switching and the realization of advanced AI-oriented computing functionalities.

DOI：

https://doi.org/10.1149/MA2026-01331498mtgabs