【Device Papers】2.7-kV Ga₂O₃ Vertical Schottky Barrier Diode With Photo-Dielectric Field-Plate

      Researchers from University of North Carolina at Charlotte have published a dissertation titled " 2.7-kV Ga₂O₃ Vertical Schottky Barrier Diode With Photo-Dielectric Field-Plate " in IEEE Transactions on Electron Devices.

Abstract

      In this article, we report a systematic experimental study of Ga₂O₃ Schottky barrier diodes (SBDs) with a novel photo-dielectric (PD) field-plate (FP) process featuring a significantly simplified fabrication procedure that can produce high-performance diodes that are comparable with chemical-vapor-deposited field-plated diodes. The effects of different FP dielectric thickness and designs were investigated on both single FP and double FP diodes. The double FP diode achieved an on-resistance (R_on,sp) of 7.5 mΩ·cm²，with a breakdown voltage（V_br）of 2.78 kV, and a 1.04 GW/cm² power-figure-of-merit (PFOM), without any substrate etching or hetero-integration. The liquid packaging effect was investigated by comparing breakdown voltages（V_br）measured under two types of dielectric liquid immersion, indicating that the highest V_br observed in these experiments is likely extrinsic and packaging-limited.

DOI：

https://doi.org/10.1109/TED.2026.3715153