【Device Papers】Vertical β-Ga₂O₃ isolated source electrode field effect transistors (ISEFET) without planarization or mid-gap acceptor blocking layers

      Researchers from The Ohio State University have published a dissertation titled " Vertical β-Ga₂O₃ isolated source electrode field effect transistors (ISEFET) without planarization or mid-gap acceptor blocking layers " in Applied Physics Express.

Abstract

      We propose and demonstrate a vertical β-Ga₂O₃ transistor architecture without the use of planarization etch back or mid-gap acceptor regions. The isolated source electrode field effect transistor (ISEFET) incorporates a dielectric current blocking layer to access an isolated source pad extending from the top fin metal. The fabricated devices were e-mode with threshold voltage of 2 V, on-off ratio > 10⁷, and had excellent gate modulation characteristics. The ISEFET proved to be suitable for fast prototyping and large-scale manufacturing of future Gallium oxide and other wide bandgap semiconductor devices.

DOI：

https://doi.org/10.35848/1882-0786/ae9de7