【Member News】Guangzhou Tanoxi Technology Co., Ltd. Achieves Breakthrough in (010) Gallium Oxide SBD Device Technology

      Recently, Guangzhou Tanoxi Technology Co., Ltd. (hereinafter referred to as “the Company”) has made phased progress in gallium oxide (Ga₂O₃) power devices. Following its breakthrough in (010) thick-film homoepitaxy, the Company has successfully fabricated Schottky barrier diodes (SBDs) using its proprietary epitaxial materials and completed electrical characterization.

      The devices demonstrate favorable forward conduction characteristics, achieving high forward current density and a reverse voltage rating of 1,200 V. These results validate the potential of the Company’s high-quality (010) Ga₂O₃ thick-film epitaxial materials for high-voltage power device applications, marking the extension of its technology roadmap from epitaxial materials to power devices.

Figure 1. Photograph of the (010) Ga₂O₃ SBD device

      Previously, the Company achieved high-quality thick-film homoepitaxial growth on (010) substrates using metal-organic chemical vapor deposition (MOCVD). The epitaxial film was single-crystalline, with a room-temperature electron mobility of 160 cm²/V·s, a doping concentration of 1.5 × 10¹⁶ cm⁻³ measured by the C–V method, an X-ray rocking-curve full width at half maximum (FWHM) of 60 arcsec, and a surface roughness of less than 2 nm.

      The high-quality thick-film epitaxy, lightly doped drift layer, and excellent crystal quality provide a solid material foundation for achieving high breakdown voltage and low conduction losses in SBDs.

      Test results show that the device exhibits both favorable forward conduction characteristics and a reverse voltage rating of 1,200 V.

Figure 2. Forward and reverse J–V characteristics of the (010) Ga₂O₃ SBD: (a) forward bias; (b) reverse bias

      In terms of forward performance, the device exhibits favorable conduction characteristics under forward bias, achieving a high forward current density. The relatively high electron mobility of the (010) crystal plane enhances carrier transport efficiency, supporting high current density and low conduction losses. In terms of reverse performance, the device achieves a reverse voltage rating of 1,200 V, demonstrating the potential of high-quality thick-film epitaxy for high-voltage applications. The combination of forward conduction performance and reverse voltage capability further highlights the potential of the (010) Ga₂O₃ material system for high-voltage, high-current-density power devices.

      This progress in SBD devices marks a further extension of the Company's technology roadmap for (010) Ga₂O₃. The Company will continue to advance the collaborative development of high-quality thick-film epitaxy and power devices, providing customers with solutions spanning epitaxial materials through device validation and supporting the industrialization of gallium oxide power devices.

Company Profile

      Guangzhou Tanoxi Technology Co., Ltd. was founded in May 2022. It is a technology-focused enterprise specializing in the R&D, production and sales of gallium-oxide epitaxial materials and devices.

      Centered on its self-developed Ga₂O₃ epitaxy technology, the Company has built an industrial-grade production line for Ga₂O₃ thin films with fully independent intellectual property rights. Through precise modulation of key epitaxy-process parameters, the Company’s products have reached internationally-advanced benchmarks on a full set of performance indicators.

      The Company devotes itself to R&D and manufacturing of high-quality Ga₂O₃ epitaxial materials, so as to satisfy the market demand for power-electronic devices in sectors such as new-energy vehicles, State Grid of China, rail transit and 5G communications. It strives to deliver domestically self-controllable core-material guarantee and technical-support solutions for the country.

      Website:www.tanoxitech.com

      Contact

      Email: contact@tnxtech.cn

      Tel: +86 191 2051 6329